SCHEMBL20580591

SCHEMBL20580591

O=S(=O)([O-])OOS(=O)(=O)[O-].[Cu+].[Cu+]

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
ALDH1A1 P00352 1/20 0.33
TSHR P16473 1/20 0.33
KMT2A Q03164 1/20 0.33
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28364973 1.00 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL6545746 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL2337584 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL17513048 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580570 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL3081554 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL14801789 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580471 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580451 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2
SCHEMBL20580373 0.91 MEN1 (0.33) MEN1ALDH1A1TSHRKMT2ACA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10711160-B2 Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-07-14 US claimed
US-20180355213-A1 Slurry Compositions for Polishing a Metal Layer and Methods for Fabricating Semiconductor Devices Using the Same KCTECH CO.,LTD. (KR) 2018-12-13 US claimed
CN-115012953-A Grouting reinforcement process and equipment for water-rich flowing sand surrounding rock in coal mine or tunnel engineering 北京瑞诺安科新能源技术有限公司 2022-09-06 CN disclosed
US-10711160-B2 Slurry compositions for polishing a metal layer and methods for fabricating semiconductor devices using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2020-07-14 US disclosed
CN-109021833-A The method of paste compound and production semiconductor device for polishing metal layer 三星电子株式会社 2018-12-18 CN disclosed
US-20180355213-A1 Slurry Compositions for Polishing a Metal Layer and Methods for Fabricating Semiconductor Devices Using the Same KCTECH CO.,LTD. (KR) 2018-12-13 US disclosed