Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SPHK1 | Q9NYA1 | 1/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | OPRM1 | P35372 | 1/20 | 0.44 |
| ▸ | ACE2 | Q9BYF1 | 1/20 | 0.42 |
| ▸ | GPR84 | Q9NQS5 | 3/20 | 0.41 |
| ▸ | FDPS | P14324 | 3/20 | 0.41 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9397592 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL8073297 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL9397568 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL9397582 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL8647768 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL2058621 | 1.00 | SPHK1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL2058577 | 0.97 | OPRM1 (0.46) | SPHK1LMNAOPRM1ACE2GPR84 | |
| SCHEMBL2058232 | 0.90 | — | — | |
| SCHEMBL8935007 | 0.88 | FAAH (0.45) | LMNAFFAR1MAPT | |
| SCHEMBL936695 | 0.88 | FAAH (0.45) | LMNAFFAR1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |