⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3341645 | 0.77 | — | — | |
| SCHEMBL1373411 | 0.65 | — | — | |
| SCHEMBL5851125 | 0.65 | — | — | |
| SCHEMBL7214676 | 0.64 | — | — | |
| SCHEMBL5053395 | 0.60 | — | — | |
| SCHEMBL14954288 | 0.60 | — | — | |
| SCHEMBL3239198 | 0.60 | — | — | |
| SCHEMBL8464388 | 0.60 | — | — | |
| SCHEMBL8464385 | 0.60 | — | — | |
| SCHEMBL3239196 | 0.60 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115769364-A | Metal oxide diffusion barrier | 朗姆研究公司 | 2023-03-07 | — | — | CN | claimed |
| US-20130230652-A1 | RUTHENIUM FILM FORMATION METHOD AND COMPUTER READABLE STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2013-09-05 | — | — | US | claimed |
| CN-101395297-A | Ruthenium film forming method and computer-readable storage medium | TOKYO ELECTRON LTD (JP) | 2009-03-25 | — | — | CN | claimed |
| US-20090035466-A1 | RUTHENIUM FILM FORMATION METHOD AND COMPUTER READABLE STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2009-02-05 | — | — | US | claimed |
| US-6825126-B2 | Manufacturing method of semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2004-11-30 | — | — | US | claimed |
| US-12544749-B2 | Method for preparing single-atom, atomic cluster or single-molecular catalyst for oxidative coupling of methane using chemical vapor deposition | KOREA INSTITUTE OF ENERGY RESEARCH (KR) | 2026-02-10 | — | — | US | disclosed |
| US-20250339787-A1 | SOURCE MATERIAL COLLECTION SYSTEM, SUBSTRATE PROCESSING APPARATUS, SOURCE MATERIAL COLLECTION METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Kokusai Electric Corporation (JP) | 2025-11-06 | — | — | US | disclosed |
| EP-4632794-A1 | RAW MATERIAL COLLECTION SYSTEM, SUBSTRATE PROCESSING APPARATUS, RAW MATERIAL COLLECTION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Kokusai Electric Corporation (JP) | 2025-10-15 | — | — | EP | disclosed |
| WO-2024195036-A1 | RAW MATERIAL COLLECTION SYSTEM, SUBSTRATE PROCESSING APPARATUS, RAW MATERIAL COLLECTION METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | 株式会社KOKUSAI ELECTRIC | 2024-09-26 | — | — | WO | disclosed |
| CN-117981052-A | Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium | 株式会社国际电气 | 2024-05-03 | — | — | CN | disclosed |
| US-20230182126-A1 | METHOD FOR PREPARING SINGLE-ATOM, ATOMIC CLUSTER OR SINGLE-MOLECULAR CATALYST FOR OXIDATIVE COUPLING OF METHANE USING CHEMICAL VAPOR DEPOSITION | KOREA INSTITUTE OF ENERGY RESEARCH (KR) | 2023-06-15 | — | — | US | disclosed |
| CN-115769364-A | Metal oxide diffusion barrier | 朗姆研究公司 | 2023-03-07 | — | — | CN | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128863-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128862-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | disclosed |
| US-6825126-B2 | Manufacturing method of semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC. (JP) | 2004-11-30 | — | — | US | disclosed |