⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3239196 | 1.00 | — | — | |
| SCHEMBL4020194 | 0.82 | — | — | |
| SCHEMBL4020195 | 0.82 | — | — | |
| SCHEMBL3239560 | 0.68 | — | — | |
| SCHEMBL1742221 | 0.65 | — | — | |
| SCHEMBL3344391 | 0.65 | — | — | |
| SCHEMBL3185485 | 0.64 | — | — | |
| SCHEMBL3950005 | 0.64 | — | — | |
| SCHEMBL8464385 | 0.63 | — | — | |
| SCHEMBL3341645 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7737028-B2 | Selective ruthenium deposition on copper materials | APPLIED MATERIALS, INC. (US) | 2010-06-15 | — | — | US | claimed |
| US-20090087982-A1 | SELECTIVE RUTHENIUM DEPOSITION ON COPPER MATERIALS | APPLIED MATERIALS, INC. | 2009-04-02 | — | — | US | claimed |
| WO-2022209982-A1 | METHOD FOR FORMING RUTHENIUM FILM AND PROCESSING APPARATUS | 東京エレクトロン株式会社 | 2022-10-06 | — | — | WO | disclosed |
| US-11094586-B2 | Semiconductor device including interconnections having different structures and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-08-17 | — | — | US | disclosed |
| US-20200243374-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-07-30 | — | — | US | disclosed |
| US-10163699-B2 | Cu wiring forming method and semiconductor device manufacturing method | TOKYO ELECTRON LIMITED (JP) | 2018-12-25 | — | — | US | disclosed |
| US-20180047624-A1 | Cu WIRING FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | TOKYO ELECTRON LIMITED (JP) | 2018-02-15 | — | — | US | disclosed |
| US-9887099-B2 | Pattern forming method capable of minimizing deviation of an inversion pattern | TOKYO ELECTRON LIMITED (JP) | 2018-02-06 | — | — | US | disclosed |
| US-9735046-B2 | Semiconductor device manufacturing method and storage medium | TOKYO ELECTRON LIMITED (JP) | 2017-08-15 | — | — | US | disclosed |
| US-20170125262-A1 | PATTERN FORMING METHOD | TOKYO ELECTRON LIMITED (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20170062269-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND STORAGE MEDIUM | TOKYO ELECTRON LIMITED (JP) | 2017-03-02 | — | — | US | disclosed |
| WO-2007142690-A2 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. (US) | 2007-12-13 | — | — | WO | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128863-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128862-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | disclosed |
| US-6605735-B2 | Ruthenium complex, process for producing the same and process for producing thin film | TOSOH CORPORATION (JP) | 2003-08-12 | — | — | US | disclosed |