SCHEMBL3239196

SCHEMBL3239196

CC(C)=C/C(C)=C\[Ru]C1=CC=CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3239198 1.00
SCHEMBL4020194 0.82
SCHEMBL4020195 0.82
SCHEMBL3239560 0.68
SCHEMBL1742221 0.65
SCHEMBL3344391 0.65
SCHEMBL3185485 0.64
SCHEMBL3950005 0.64
SCHEMBL8464385 0.63
SCHEMBL3341645 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7737028-B2 Selective ruthenium deposition on copper materials APPLIED MATERIALS, INC. (US) 2010-06-15 US claimed
US-20090087982-A1 SELECTIVE RUTHENIUM DEPOSITION ON COPPER MATERIALS APPLIED MATERIALS, INC. 2009-04-02 US claimed
WO-2022209982-A1 METHOD FOR FORMING RUTHENIUM FILM AND PROCESSING APPARATUS 東京エレクトロン株式会社 2022-10-06 WO disclosed
US-10163699-B2 Cu wiring forming method and semiconductor device manufacturing method TOKYO ELECTRON LIMITED (JP) 2018-12-25 US disclosed
US-20180047624-A1 Cu WIRING FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD TOKYO ELECTRON LIMITED (JP) 2018-02-15 US disclosed
US-9735046-B2 Semiconductor device manufacturing method and storage medium TOKYO ELECTRON LIMITED (JP) 2017-08-15 US disclosed
US-20170062269-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND STORAGE MEDIUM TOKYO ELECTRON LIMITED (JP) 2017-03-02 US disclosed
US-9425093-B2 Copper wiring forming method, film forming system, and storage medium TOKYO ELECTRON LIMITED (JP) 2016-08-23 US disclosed
US-9406557-B2 Copper wiring forming method with Ru liner and Cu alloy fill TOKYO ELECTRON LIMITED (JP) 2016-08-02 US disclosed
US-9368418-B2 Copper wiring structure forming method TOKYO ELECTRON LIMITED (JP) 2016-06-14 US disclosed
US-20160163591-A1 COPPER WIRING FORMING METHOD, FILM FORMING SYSTEM, AND STORAGE MEDIUM TOKYO ELECTRON LIMITED (JP) 2016-06-09 US disclosed
US-20140175046-A1 METHOD FOR FORMING COPPER WIRING TOKYO ELECTRON LIMITED (JP) 2014-06-26 US disclosed
US-20140161992-A1 METHOD FOR FORMING COPPER WIRING TOKYO ELECTRON LIMITED (JP) 2014-06-12 US disclosed
US-20140030886-A1 METHOD FOR FORMING COPPER WIRING TOKYO ELECTRON LIMITED (JP) 2014-01-30 US disclosed
US-8399353-B2 Methods of forming copper wiring and copper film, and film forming system TOKYO ELECTRON LIMITED (JP) 2013-03-19 US disclosed
US-20120196437-A1 METHODS OF FORMING COPPER WIRING AND COPPER FILM, AND FILM FORMING SYSTEM TOKYO ELECTRON LIMITED (JP) 2012-08-02 US disclosed
US-20120196052-A1 METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM TOKYO ELECTRON LIMITED (JP) 2012-08-02 US disclosed
US-7737028-B2 Selective ruthenium deposition on copper materials APPLIED MATERIALS, INC. (US) 2010-06-15 US disclosed
US-20090087982-A1 SELECTIVE RUTHENIUM DEPOSITION ON COPPER MATERIALS APPLIED MATERIALS, INC. 2009-04-02 US disclosed
US-6605735-B2 Ruthenium complex, process for producing the same and process for producing thin film TOSOH CORPORATION (JP) 2003-08-12 US disclosed