SCHEMBL2058482

SCHEMBL2058482

CCCCN(CC)CO

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1880050 0.88 CA12 (0.44)
SCHEMBL976730 0.88
Hydrochloric Acid SCHEMBL29268615 0.87 DNM1 (0.48)
Bromide SCHEMBL29268614 0.87 DNM1 (0.48)
SCHEMBL5052422 0.83
SCHEMBL7964014 0.83 CA12 (0.41)
SCHEMBL94543 0.82
SCHEMBL217114 0.82 KCNH2 (0.47)
SCHEMBL22725 0.82
SCHEMBL1403827 0.81 HSD17B10 (0.50)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
CN-101398639-A Composition for stripping and stripping method SAMSUNG ELECTRONICS CO LTD (KR) 2009-04-01 CN claimed
WO-2016044641-A2 CARM1 INHIBITORS AND USES THEREOF Epizyme, Inc. (US) 2016-03-24 WO disclosed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
CN-101398639-A Composition for stripping and stripping method SAMSUNG ELECTRONICS CO LTD (KR) 2009-04-01 CN disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
US-6204222-B1 SUITABLE AS HERBICIDES AND FOR DESICCATION/DEFOLIATION OF PLANTS BASF AKTIENGESELLSCHAFT (DE) 2001-03-20 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed
EP-0637298-B1 SUBSTITUTED CYCLOHEXENE-1,2-BICARBOXYLIC ACID DERIVATIVES AND RAW MATERIALS FOR PRODUCING THEM BASF AG (DE) 1999-03-31 EP disclosed
US-5817603-A HERBICIDES BASF AKTIENGESELLSCHAFT (DE) 1998-10-06 US disclosed
US-5602074-A HERBICIDES; PLANT DESICCATION, DEFOLIATION BASF AKTIENGESELLSCHAFT (DE) 1997-02-11 US disclosed
EP-0641321-A1 SUBSTITUTED ISOINDOLONES BASF Aktiengesellschaft (DE) 1995-03-08 EP disclosed
WO-1993024456-A1 SUBSTITUTED ISOINDOLONES BASF AKTIENGESELLSCHAFT (DE) 1993-12-09 WO disclosed
WO-1993022280-A1 SUBSTITUTED CYCLOHEXENE-1,2-BICARBOXYLIC ACID DERIVATIVES AND RAW MATERIALS FOR PRODUCING THEM BASF AKTIENGESELLSCHAFT (DE) 1993-11-11 WO disclosed
US-5190640-A Sweetening sour oils and gases BAKER HUGHES INCORPORATED (US) 1993-03-02 US disclosed