SCHEMBL2058664

SCHEMBL2058664

[Sb].c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.38
TSHR P16473 6/20 0.35
TDP1 Q9NUW8 5/20 0.33
ALOX12 P18054 3/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA9 Q16790 2/20 0.33
CA12 O43570 1/20 0.33
GLA P06280 1/20 0.33
CA3 P07451 1/20 0.33
CA4 P22748 1/20 0.33
CA14 Q9ULX7 1/20 0.33
LMNA P02545 1/20 0.33
ACHE P22303 1/20 0.33
CA7 P43166 1/20 0.33
HSD17B10 Q99714 3/20 0.32
MAPT P10636 1/20 0.32
HPGD P15428 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
MGLL Q99685 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride Ion SCHEMBL11224900 0.96 ALDH1A1 (0.37) ALDH1A1TSHRTDP1ALOX12CA1
Hydrochloric Acid SCHEMBL7520469 0.96 ALDH1A1 (0.35) ALDH1A1TSHRTDP1ALOX12CA1
Fluoride Ion SCHEMBL126104 0.96 ALDH1A1 (0.37) ALDH1A1TSHRTDP1ALOX12CA1
SCHEMBL10801908 0.96 ALDH1A1 (0.40) ALDH1A1TSHRTDP1ALOX12CA1
SCHEMBL47554 0.96 ALDH1A1 (0.40) ALDH1A1TSHRTDP1ALOX12CA1
Methane SCHEMBL2440754 0.92 ALDH1A1 (0.38) ALDH1A1TSHRTDP1ALOX12CA1
Fluoride Ion SCHEMBL10437963 0.92 ALDH1A1 (0.39) ALDH1A1TSHRTDP1ALOX12CA1
SCHEMBL12762137 0.92 ALDH1A1 (0.38) ALDH1A1TSHRTDP1ALOX12CA1
Methane SCHEMBL3253432 0.92 ALDH1A1 (0.38) ALDH1A1TSHRTDP1ALOX12CA1
Bromide SCHEMBL60557 0.92 ALDH1A1 (0.38) ALDH1A1TSHRTDP1ALOX12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9535326-B2 Methods of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-01-03 US disclosed
US-20150227046-A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2015-08-13 US disclosed
US-7968275-B2 Method of forming a pattern using a photoresist composition for immersion lithography SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-7781153-B2 Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-08-24 US disclosed
US-20090176177-A1 METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SAMSUNG ELECTRONICS CO., LTD. 2009-07-09 US disclosed
US-20090092931-A1 Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-04-09 US disclosed
US-7494761-B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-24 US disclosed
US-7485407-B2 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-03 US disclosed
US-7442489-B2 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-10-28 US disclosed
US-20080213699-A1 PHOTORESIST COMPOSITION AND METHOD OF FORMING A PHOTORESIST PATTERN USING THE PHOTORESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-09-04 US disclosed
US-7326519-B2 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-02-05 US disclosed
US-20070249117-A1 Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-10-25 US disclosed
US-7258963-B2 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-21 US disclosed
US-20070166644-A1 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-07-19 US disclosed
US-20070148590-A1 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-06-28 US disclosed
US-20060188821-A1 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-08-24 US disclosed
US-20060160019-A1 Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 US disclosed
US-20060160021-A1 Photoresist composition and method of forming a photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 US disclosed
US-20060160020-A1 Photosensitive polymer, photoresist composition having the photosensitive polymer and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-07-20 US disclosed
US-20060134549-A1 Photosensitive polymer, photoresist composition including the photosensitive polymer and method of forming a photoresist pattern using the photoresist composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-06-22 US disclosed