Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 2/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.46 |
| ▸ | HPGD | P15428 | 1/20 | 0.46 |
| ▸ | ACACB | O00763 | 1/20 | 0.45 |
| ▸ | HTT | P42858 | 2/20 | 0.42 |
| ▸ | PKM | P14618 | 3/20 | 0.42 |
| ▸ | LMNA | P02545 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.41 |
| ▸ | LARS1 | Q9P2J5 | 1/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | BCL2L1 | Q07817 | 2/20 | 0.41 |
| ▸ | MCL1 | Q07820 | 2/20 | 0.41 |
| ▸ | MMP2 | P08253 | 1/20 | 0.41 |
| ▸ | MMP13 | P45452 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | HTR2C | P28335 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5950356 | 0.73 | GAA (0.48) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL5950354 | 0.73 | GAA (0.48) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL2705523 | 0.70 | ALDH1A1 (0.54) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL13359969 | 0.69 | HSD11B1 (0.45) | ALDH1A1HPGDMEN1KMT2AMMP2 | |
| SCHEMBL8752627 | 0.68 | KMT2A (0.56) | GAAALDH1A1ACACBMEN1KMT2A | |
| SCHEMBL4629467 | 0.68 | GAA (0.61) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL2069060 | 0.67 | GAA (0.74) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL5951016 | 0.67 | GAA (0.50) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL5276256 | 0.67 | GAA (0.50) | GAAALDH1A1KDM4EHPGDHTT | |
| SCHEMBL15181330 | 0.67 | KMT2A (0.47) | GAAALDH1A1KDM4EHPGDLMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230384679-A1 | PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230384679-A1 | PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230367216-A1 | BOTTOM ANTIREFLECTIVE COATING MATERIALS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230367216-A1 | BOTTOM ANTIREFLECTIVE COATING MATERIALS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-11796918-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-24 | — | — | US | disclosed |
| US-11796918-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-24 | — | — | US | disclosed |
| US-11782345-B2 | Bottom antireflective coating materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-10 | — | — | US | disclosed |
| US-11782345-B2 | Bottom antireflective coating materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-10 | — | — | US | disclosed |
| US-10990013-B2 | Method for forming semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-27 | — | — | US | disclosed |
| US-20210041784-A1 | Bottom Antireflective Coating Materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-02-11 | — | — | US | disclosed |
| US-20200365398-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE BY PATTERNING RESIST LAYER HAVING INORGANIC MATERIAL | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-19 | — | — | US | disclosed |
| US-20200333710-A1 | Underlayer Material for Photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-10-22 | — | — | US | disclosed |
| US-10741391-B2 | Method for forming semiconductor structure by patterning resist layer having inorganic material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-08-11 | — | — | US | disclosed |
| US-10698317-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-06-30 | — | — | US | disclosed |
| US-20200073243-A1 | Photosensitive Middle Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-03-05 | — | — | US | disclosed |
| US-20190265590-A1 | Underlayer Material for Photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-08-29 | — | — | US | disclosed |
| US-20190122881-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-04-25 | — | — | US | disclosed |
| US-20190096675-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-03-28 | — | — | US | disclosed |