SCHEMBL2102103

SCHEMBL2102103

CCN(CC)[SiH](Cl)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.34
CNR2 P34972 1/20 0.34
SIGMAR1 Q99720 1/20 0.34
ADRA2A P08913 2/20 0.33
KCNH2 Q12809 2/20 0.33
HTR2A P28223 2/20 0.33
HRH1 P35367 2/20 0.33
ALDH1A1 P00352 2/20 0.33
TP53 P04637 1/20 0.33
PGR P06401 1/20 0.33
ADRA2B P18089 1/20 0.33
GLA P06280 1/20 0.33
KDM4E B2RXH2 1/20 0.32
CHRM2 P08172 1/20 0.32
HTR1A P08908 1/20 0.32
CHRM1 P11229 1/20 0.32
DRD1 P21728 1/20 0.32
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2268759 0.76 L3MBTL1 (0.36) TSHRL3MBTL1CNR2SIGMAR1ADRA2A
SCHEMBL2100542 0.76 L3MBTL1 (0.36) TSHRL3MBTL1CNR2SIGMAR1ADRA2A
SCHEMBL2268251 0.74 L3MBTL1 (0.35) TSHRL3MBTL1CNR2SIGMAR1ADRA2A
SCHEMBL2270198 0.74 TSHR (0.35) TSHRL3MBTL1SIGMAR1ADRA2AKCNH2
SCHEMBL2100320 0.73 HTR2A (0.36) TSHRHTR2AHRH1ALDH1A1KDM4E
SCHEMBL2268925 0.73 L3MBTL1 (0.34) TSHRL3MBTL1CNR2SIGMAR1ADRA2A
SCHEMBL27892582 0.73 L3MBTL1 (0.34) TSHRL3MBTL1CNR2SIGMAR1ADRA2A
SCHEMBL2104061 0.71 TSHR (0.33) TSHRL3MBTL1ADRA2AKCNH2HTR2A
SCHEMBL2271132 0.71 LMNA (0.36) TSHRL3MBTL1SIGMAR1ADRA2AKCNH2
SCHEMBL2102088 0.70 TSHR (0.46) TSHRL3MBTL1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed