SCHEMBL2102290

SCHEMBL2102290

CNC(Cl)[SiH2]c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 3/20 0.34
SLC18A2 Q05940 1/20 0.34
SIGMAR1 Q99720 1/20 0.34
TSHR P16473 3/20 0.33
HTR2A P28223 2/20 0.33
CHRM2 P08172 1/20 0.33
ADRA1A P35348 1/20 0.33
RGS12 O14924 1/20 0.33
GLA P06280 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
PKM P14618 1/20 0.33
ALOX15 P16050 1/20 0.33
ALOX12 P18054 1/20 0.33
ADRA2C P18825 1/20 0.33
NFKB1 P19838 1/20 0.33
CYP2C19 P33261 1/20 0.33
THPO P40225 1/20 0.33
GNAI1 P63096 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100214 0.77 SIGMAR1 (0.41) TAAR1SIGMAR1TSHRPKMKCNN4
SCHEMBL235042 0.76 TAAR1 (0.37) TAAR1SLC18A2SIGMAR1TSHRHTR2A
SCHEMBL68908 0.73 TSHR (0.38) TAAR1SIGMAR1TSHRCYP2D6ALOX12
SCHEMBL10318392 0.73 TSHR (0.33) TAAR1TSHRCYP2D6KCNN4
SCHEMBL379621 0.72 TSHR (0.41) TSHRHSD17B10TDP1
SCHEMBL28804974 0.72 TSHR (0.41) TSHRHSD17B10TDP1
SCHEMBL28159156 0.70 TSHR (0.39) TSHRHSD17B10
Water SCHEMBL28841261 0.70 TSHR (0.39) TSHRHSD17B10
Ammonia Solution, Strong SCHEMBL27677632 0.70 TSHR (0.39) TSHRHSD17B10
SCHEMBL27844485 0.69 TSHR (0.38) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed