SCHEMBL2102683

SCHEMBL2102683

CN(C)C(C[SiH3])N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103413 0.72
SCHEMBL2269298 0.67
SCHEMBL2564393 0.67
SCHEMBL2563620 0.67
SCHEMBL2268857 0.67
SCHEMBL2104404 0.65
Hydrochloric Acid SCHEMBL28012231 0.65
SCHEMBL2102070 0.65 FDPS (0.32)
SCHEMBL1001523 0.64
SCHEMBL1585525 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
EP-0540084-B1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM SPA (IT) 1996-09-04 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
EP-0540084-A1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM S.p.A. (IT) 1993-05-05 EP claimed
US-5208069-A Silane precursor ISTITUTO GUIDO DONEGANI S.P.A. (IT) 1993-05-04 US claimed
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
CN-117121172-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 株式会社国际电气 2023-11-24 CN disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
EP-0540084-A1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM S.p.A. (IT) 1993-05-05 EP disclosed
US-5208069-A Silane precursor ISTITUTO GUIDO DONEGANI S.P.A. (IT) 1993-05-04 US disclosed
EP-0228095-B1 PROCESS FOR THE PREPARATION OF OLEFINIC SILANES AND SILOXANES UNION CARBIDE CORPORATION (US) 1992-01-22 EP disclosed
EP-0228095-A2 Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-07-08 EP disclosed
US-4668812-A Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-05-26 US disclosed
EP-0112434-A2 Hydrogen bearing silyl carbamates UNION CARBIDE CORPORATION (US) 1984-07-04 EP disclosed
US-4400526-A Hydrogen bearing silyl carbamates UNION CARBIDE CORPORATION (US) 1983-08-23 US disclosed