SCHEMBL2102070

SCHEMBL2102070

CCN(CC)C(C[SiH3])N(CC)CC

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
FDPS P14324 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102747 0.75
SCHEMBL27033023 0.75 FDPS (0.37) FDPS
SCHEMBL3783686 0.73 FDPS (0.32) FDPS
SCHEMBL1252854 0.72 FDPS (0.35) FDPS
SCHEMBL2271545 0.71 PLA2G1B (0.31)
SCHEMBL27032991 0.71 MMP1 (0.32)
SCHEMBL2269082 0.71
SCHEMBL2099361 0.69
SCHEMBL2102095 0.67
SCHEMBL1529377 0.67 FDPS (0.38) FDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10658296-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-05-19 US claimed
US-20190035673-A1 FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS INTEL CORP (US) 2019-01-31 US claimed
US-20180096936-A1 Dielectric Film For Semiconductor Fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2018-04-05 US claimed
WO-2017171817-A1 FLOWABLE DIELECTRICS FROM VAPOR PHASE PRECURSORS INTEL CORPORATION (US) 2017-10-05 WO claimed
US-11901295-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-02-13 US disclosed
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
CN-117121172-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 株式会社国际电气 2023-11-24 CN disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
US-20220223528-A1 Dielectric Film for Semiconductor Fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-07-14 US disclosed
US-11296027-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2022-04-05 US disclosed
US-11152306-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2021-10-19 US disclosed
US-10658296-B2 Dielectric film for semiconductor fabrication TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2020-05-19 US disclosed
WO-2006014471-A1 SILICON NITRIDE FILM WITH STRESS CONTROL APPLIED MATERIALS, INC. (US) 2006-02-09 WO disclosed
US-20060009041-A1 Silicon nitride film with stress control APPLIED MATERIALS, INC. 2006-01-12 US disclosed
EP-0228095-B1 PROCESS FOR THE PREPARATION OF OLEFINIC SILANES AND SILOXANES UNION CARBIDE CORPORATION (US) 1992-01-22 EP disclosed
US-4780554-A O-silylated ketene acetals and enol ethers and method of preparation UNION CARBIDE CORPORATION (US) 1988-10-25 US disclosed
EP-0228095-A2 Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-07-08 EP disclosed
US-4668812-A Process for the preparation of olefinic silanes and siloxanes UNION CARBIDE CORPORATION (US) 1987-05-26 US disclosed
EP-0184692-A1 Method of preparation of o-silylated ketene acetals and enol ethers UNION CARBIDE CORPORATION (US) 1986-06-18 EP disclosed
US-4400526-A Hydrogen bearing silyl carbamates UNION CARBIDE CORPORATION (US) 1983-08-23 US disclosed