SCHEMBL2102696

SCHEMBL2102696

CCC([SiH3])=C(N(CC)CC)N(CC)CC

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EHMT2 Q96KQ7 3/20 0.33
EHMT1 Q9H9B1 3/20 0.33
ABCB11 O95342 2/20 0.33
HTT P42858 2/20 0.33
GSDMD P57764 2/20 0.33
CA12 O43570 2/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA4 P22748 2/20 0.33
CA9 Q16790 2/20 0.33
CYP2E1 P05181 1/20 0.33
PTGS1 P23219 1/20 0.33
LMNA P02545 2/20 0.32
PHGDH O43175 1/20 0.32
PLIN1 O60240 1/20 0.32
GMNN O75496 1/20 0.32
TRPA1 O75762 1/20 0.32
ALDH1A1 P00352 1/20 0.32
TP53 P04637 1/20 0.32
ALDH2 P05091 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL609780 0.74 EHMT2 (0.32) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL610645 0.73 EHMT2 (0.35) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL11027334 0.71 LMNA (0.33) LMNA
SCHEMBL2101423 0.71 EHMT2 (0.33) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL2102699 0.69 EHMT2 (0.32) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL706539 0.67 CA12 (0.36) CA12CA1CA2CA9TSHR
SCHEMBL2267977 0.67 ABCB11 (0.31) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL10660269 0.65 EHMT2 (0.38) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL612658 0.65 EHMT2 (0.33) EHMT2EHMT1ABCB11HTTGSDMD
SCHEMBL2274644 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed