SCHEMBL2102870

SCHEMBL2102870

CCCCN(CN(CC)CC)[SiH2]C(C)(C)C

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CA12 O43570 2/20 0.32
CA1 P00915 2/20 0.32
CA9 Q16790 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2274969 0.83 CA12 (0.32) CA12CA1CA9
SCHEMBL2102495 0.75 CA12 (0.34) CA12CA1CA9
SCHEMBL2103937 0.73 CA12 (0.33) CA12CA1CA9
SCHEMBL2101788 0.72 CA12 (0.32) CA12CA1CA9
SCHEMBL2103238 0.72 PLA2G1B (0.33) CA12CA1CA9
SCHEMBL2103882 0.71 PLA2G1B (0.32) CA12CA1CA9
SCHEMBL2099428 0.71 TSHR (0.33)
SCHEMBL16577646 0.68 CA12 (0.39) CA12CA1CA9
SCHEMBL2270328 0.67
SCHEMBL2269278 0.67 DNM1 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed