SCHEMBL2103096

SCHEMBL2103096

CCN[Si](Cl)(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 2/20 0.41
TP53 P04637 1/20 0.35
GAA P10253 2/20 0.33
SIGMAR1 Q99720 1/20 0.33
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33
HPGD P15428 1/20 0.33
NPC1 O15118 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP2C19 P33261 1/20 0.33
RAB9A P51151 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
HTT P42858 1/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
CYP2D6 P10635 2/20 0.32
HTR1A P08908 1/20 0.32
SCN1A P35498 1/20 0.32
SLC6A3 Q01959 1/20 0.32
SCN5A Q14524 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100205 0.81 KCNN4 (0.37) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2099500 0.81 KCNN4 (0.37) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2100216 0.79 ESR1 (0.40) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2100791 0.79 KCNN4 (0.36) KCNN4TP53ALDH1A1CYP2C19HTT
SCHEMBL2102236 0.77 KCNN4 (0.34) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2100398 0.76 KCNN4 (0.33) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2268924 0.75 KCNN4 (0.39) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2102177 0.75 KCNN4 (0.39) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL233708 0.75 KCNN4 (0.39) KCNN4TP53GAASIGMAR1KDM4E
SCHEMBL2101836 0.75 KCNN4 (0.39) KCNN4KDM4EALDH1A1HPGDL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed