SCHEMBL2102236

SCHEMBL2102236

CCN[Si](Cl)(CC)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.34
GAA P10253 3/20 0.32
MAPT P10636 1/20 0.32
TP53 P04637 1/20 0.32
HPGD P15428 2/20 0.32
ALDH1A1 P00352 2/20 0.32
ALPL P05186 1/20 0.32
ALOX12 P18054 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
KDM4E B2RXH2 2/20 0.31
SIGMAR1 Q99720 1/20 0.31
PIN1 Q13526 1/20 0.31
HTT P42858 1/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103213 0.83 GAA (0.34) KCNN4GAAMAPTHPGDALDH1A1
SCHEMBL2104015 0.83 KDM4E (0.32) KCNN4GAAMAPTTP53HPGD
SCHEMBL2099742 0.80 NAAA (0.34) GAAMAPTHPGDALDH1A1KDM4E
SCHEMBL2099561 0.77 KCNN4 (0.37) KCNN4GAAMAPTTP53HPGD
SCHEMBL2103096 0.77 KCNN4 (0.41) KCNN4GAAMAPTTP53HPGD
SCHEMBL2100205 0.77 KCNN4 (0.37) KCNN4GAAMAPTTP53HPGD
SCHEMBL2099500 0.77 KCNN4 (0.37) KCNN4GAAMAPTTP53HPGD
SCHEMBL2100216 0.76 ESR1 (0.40) KCNN4GAAMAPTTP53HPGD
SCHEMBL2100398 0.72 KCNN4 (0.33) KCNN4GAAMAPTTP53HPGD
SCHEMBL2099899 0.72 SIGMAR1 (0.35) KCNN4MAPTALDH1A1ALOX12SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed