SCHEMBL2103941

SCHEMBL2103941

CC[SiH](Cl)NCCN(C)C

nearest known ligand 0.40

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
PRMT3 O60678 1/20 0.40
CARM1 Q86X55 1/20 0.40
PRMT6 Q96LA8 1/20 0.40
PRMT1 Q99873 1/20 0.40
PRMT8 Q9NR22 1/20 0.40
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
ALDH1A1 P00352 1/20 0.32
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31
CA12 O43570 1/20 0.31
CA9 Q16790 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102412 0.82 PRMT3 (0.37) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2100282 0.79 DNM1 (0.38) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2102509 0.77
SCHEMBL2103329 0.75
SCHEMBL2104162 0.70
SCHEMBL2100280 0.70 PRMT3 (0.34) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2100750 0.70 PRMT3 (0.39) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2101986 0.70 PRMT3 (0.39) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2100237 0.68 PRMT3 (0.37) PRMT3CARM1PRMT6PRMT1PRMT8
SCHEMBL2099970 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed