SCHEMBL2103990

SCHEMBL2103990

C=C([SiH3])c1cccc(Cl)c1N(C)C

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.35
TSHR P16473 2/20 0.33
CES2 O00748 1/20 0.32
CES1 P23141 1/20 0.32
ALDH1A1 P00352 2/20 0.31
HPGD P15428 1/20 0.31
DOT1L Q8TEK3 1/20 0.30
LMNA P02545 2/20 0.30
SMN1; SMN2 Q16637 2/20 0.30
NPC1 O15118 1/20 0.30
HTT P42858 1/20 0.30
RAB9A P51151 1/20 0.30
P2RX7 Q99572 1/20 0.30
MAPT P10636 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102543 0.81 TP53 (0.36) TSHRALDH1A1HPGDLMNASMN1; SMN2
SCHEMBL2100175 0.79 GAA (0.42) TSHRALDH1A1LMNASMN1; SMN2MAPT
SCHEMBL27680094 0.76 ALDH1A1 (0.47) POLBTSHRCES2CES1ALDH1A1
SCHEMBL6831109 0.76 TSHR (0.57) POLBTSHRCES2CES1ALDH1A1
SCHEMBL16746561 0.75 CYP1A2 (0.43) TSHRALDH1A1DOT1LLMNASMN1; SMN2
SCHEMBL2103300 0.74 TSHR (0.54) TSHRCES2CES1ALDH1A1LMNA
SCHEMBL27721568 0.74 POLB (0.36) POLBTSHRCES2CES1ALDH1A1
SCHEMBL2270560 0.73 CES2 (0.52) POLBTSHRCES2CES1ALDH1A1
SCHEMBL2101786 0.72 POLB (0.35) POLBTSHRCES2CES1ALDH1A1
Hydrochloric Acid SCHEMBL5858780 0.70 TP53 (0.40) POLBTSHRCES2CES1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed