SCHEMBL2104153

SCHEMBL2104153

CN[SiH2]NC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15355988 0.69
SCHEMBL432563 0.62
SCHEMBL17046120 0.59
SCHEMBL19708169 0.59
SCHEMBL2100861 0.59
Dimethylamine SCHEMBL2503496 0.54
Dimethylamine SCHEMBL5164633 0.53
Dimethylamine SCHEMBL12415750 0.53
Dimethylamine SCHEMBL13695986 0.53
Dimethylamine SCHEMBL1030 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250054747-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-02-13 US claimed
CN-118402039-A Conformal deposition of silicon nitride 朗姆研究公司 2024-07-26 CN claimed
WO-2023114641-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RESEARCH CORPORATION (US) 2023-06-22 WO claimed
US-12633499-B2 Plasma processing device and plasma processing method TOKYO ELECTRON LIMITED (JP) 2026-05-19 US disclosed
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
US-20250197996-A1 LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-06-19 US disclosed
US-20250188609-A1 SEAM-FREE AND CRACK-FREE DEPOSITION LAM RES CORP (US) 2025-06-12 US disclosed
US-20250166989-A1 THERMAL FILM DEPOSITION LAM RES CORP (US) 2025-05-22 US disclosed
CN-119895076-A Method for depositing silicon-based dielectric film 应用材料公司 2025-04-25 CN disclosed
CN-119776805-A Modified silicon nitride film and preparation method and application thereof 大连恒坤新材料有限公司 2025-04-08 CN disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110245262-A1 COMPOUNDS FOR TREATING PROLIFERATIVE DISORDERS SYNTA PHARMACEUTICALS CORP. 2011-10-06 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
EP-0384183-A2 Mixtures comprising silanol-terminated polydiorganosiloxane and processes GENERAL ELECTRIC COMPANY (US) 1990-08-29 EP disclosed
EP-0137883-B1 END-CAPPING CATALYST FOR FORMING ALCOXY-FUNCTIONAL ONE COMPONENT RTV COMPOSITIONS GENERAL ELECTRIC COMPANY (US) 1989-02-15 EP disclosed
US-4528324-A Process for producing RTV silicone rubber compositions using a devolatilizing extruder GENERAL ELECTRIC COMPANY (US) 1985-07-09 US disclosed
US-4515932-A ROOM TEMPERATURE VULCANIZATION GENERAL ELECTRIC COMPANY (US) 1985-05-07 US disclosed
EP-0137883-A1 End-capping catalyst for forming alcoxy-functional one component RTV compositions GENERAL ELECTRIC COMPANY (US) 1985-04-24 EP disclosed