SCHEMBL2104285

SCHEMBL2104285

CCCCN(CNCC)[SiH2]c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.37
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
GAA P10253 1/20 0.35
HPGD P15428 1/20 0.35
SIGMAR1 Q99720 1/20 0.34
OPRM1 P35372 2/20 0.33
OPRL1 P41146 1/20 0.33
KCNH2 Q12809 2/20 0.33
EGFR P00533 1/20 0.32
HDAC3 O15379 1/20 0.32
HDAC1 Q13547 1/20 0.32
HDAC2 Q92769 1/20 0.32
HDAC6 Q9UBN7 1/20 0.32
MAPT P10636 1/20 0.31
HTT P42858 1/20 0.31
DRD2 P14416 1/20 0.31
DRD3 P35462 1/20 0.31
OPRD1 P41143 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2271660 0.80 TDP1 (0.42) TDP1MEN1KMT2ANPSR1GAA
SCHEMBL2101845 0.75 KCNH2 (0.43) TDP1MEN1KMT2ANPSR1GAA
SCHEMBL17046077 0.73 TP53 (0.39) TDP1SIGMAR1OPRM1KCNH2DRD3
SCHEMBL2268700 0.71 TDP1 (0.43) TDP1MEN1KMT2ANPSR1GAA
SCHEMBL2100519 0.71 TSHR (0.36)
Biphenyl SCHEMBL11313974 0.71 GAA (0.47) TDP1MEN1KMT2ANPSR1GAA
SCHEMBL2102951 0.69 TSHR (0.34)
SCHEMBL2101147 0.68 TSHR (0.33)
SCHEMBL2099428 0.68 TSHR (0.33)
SCHEMBL2269712 0.67 TP53 (0.38) HPGDSIGMAR1OPRM1KCNH2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed