SCHEMBL2104431

SCHEMBL2104431

C=C([SiH3])c1cccc(NC)c1NC

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.39
POLB P06746 2/20 0.39
ATM Q13315 1/20 0.39
MAPT P10636 2/20 0.32
TDP1 Q9NUW8 2/20 0.32
L3MBTL1 Q9Y468 2/20 0.32
USP2 O75604 1/20 0.32
ALDH1A1 P00352 1/20 0.32
HPGD P15428 1/20 0.32
RECQL P46063 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
HSD17B10 Q99714 1/20 0.32
EGFR P00533 1/20 0.31
PABPC1 P11940 1/20 0.31
MAPK1 P28482 1/20 0.31
RAB9A P51151 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
CLCN2 P51788 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2270403 0.82 POLB (0.52) KDM4EPOLBATMMAPTTDP1
SCHEMBL2101786 0.81 POLB (0.35) POLBMAPTL3MBTL1USP2ALDH1A1
SCHEMBL7575587 0.74 CLCN2 (0.49) KDM4EPOLBATMMAPTTDP1
SCHEMBL27663842 0.73 POLB (0.46) KDM4EPOLBATMMAPTTDP1
SCHEMBL2103468 0.73 CYP3A4 (0.36) POLBMAPTUSP2ALDH1A1RECQL
SCHEMBL27955677 0.70 KMT2A (0.54) KDM4EPOLBATMMAPTTDP1
SCHEMBL2101608 0.69 MAPT (0.38) KDM4EPOLBATMMAPTTDP1
SCHEMBL1952571 0.69 IDO1 (0.43) KDM4EPOLBATMMAPTTDP1
SCHEMBL8574363 0.67 POLB (0.53) KDM4EPOLBATMMAPTTDP1
SCHEMBL27276860 0.67 POLB (0.53) KDM4EPOLBATMMAPTTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed