SCHEMBL2103468

SCHEMBL2103468

C=C([SiH3])c1cccc(NCC)c1NCC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.36
TSHR P16473 1/20 0.36
RECQL P46063 1/20 0.36
IDO1 P14902 2/20 0.35
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
CLCN2 P51788 1/20 0.34
USP2 O75604 1/20 0.34
CASP1 P29466 1/20 0.34
BRCA1 P38398 1/20 0.34
CASP7 P55210 1/20 0.34
FABP4 P15090 1/20 0.34
POLB P06746 1/20 0.31
G6PD P11413 1/20 0.31
JAK2 O60674 2/20 0.31
JAK1 P23458 2/20 0.31
CXCR2 P25025 1/20 0.31
MAPT P10636 1/20 0.31
PKM P14618 1/20 0.31
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2274708 0.84 IDO1 (0.42) CYP3A4TSHRRECQLIDO1MEN1
SCHEMBL2100181 0.81 TAS1R3 (0.36) MEN1KMT2ACLCN2POLBMAPT
SCHEMBL8164568 0.77 MEN1 (0.44) CYP3A4TSHRRECQLIDO1MEN1
SCHEMBL27892515 0.76 RECQL (0.36) CYP3A4TSHRRECQLIDO1MEN1
SCHEMBL2104431 0.73 KDM4E (0.39) RECQLCLCN2USP2POLBMAPT
SCHEMBL5697511 0.72 KMT2A (0.49) KMT2ACLCN2FABP4MAPTPKM
SCHEMBL2102937 0.72 MEN1 (0.39) CYP3A4TSHRRECQLIDO1MEN1
SCHEMBL1953525 0.72 IDO1 (0.48) CYP3A4TSHRRECQLIDO1MEN1
SCHEMBL2101112 0.71 KDM4E (0.34) IDO1CLCN2FABP4POLBJAK2
SCHEMBL2557198 0.71 IDO1 (0.43) CYP3A4TSHRRECQLIDO1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed