SCHEMBL2104633

SCHEMBL2104633

CN(C)[Si](Cl)(c1ccccc1)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
ALDH1A1 P00352 3/20 0.33
TSHR P16473 3/20 0.33
KCNN4 O15554 1/20 0.33
CKS1B P61024 1/20 0.32
SKP1 P63208 1/20 0.32
SKP2 Q13309 1/20 0.32
MEN1 O00255 1/20 0.32
HTT P42858 1/20 0.32
KMT2A Q03164 1/20 0.32
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
MAPT P10636 1/20 0.31
AOC3 Q16853 1/20 0.31
OPRM1 P35372 1/20 0.31
OPRK1 P41145 1/20 0.31
OPRL1 P41146 1/20 0.31
TAAR1 Q96RJ0 1/20 0.31
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100521 0.79 ESR1 (0.34) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL55438 0.79 ESR1 (0.34) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL2100797 0.77 ESR1 (0.38) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL1203911 0.76 ESR1 (0.41) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL2100486 0.73 TSHR (0.33) ESR1ESR2ALDH1A1TSHRMAPT
SCHEMBL765973 0.72 MEN1 (0.40) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL2276954 0.72 ESR1 (0.37) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL435723 0.72 ESR1 (0.37) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL2102482 0.72 TSHR (0.32) ESR1ESR2TSHRLMNA
SCHEMBL2100880 0.72 AOC3 (0.32) ESR1ESR2ALDH1A1HTR2AHRH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9323151-B2 Photosensitive oligomer for photosensitive resist, method for preparing the same, and negative photosensitive resist resin composition BOE TECHNOLOGY GROUP CO., LTD. (CN) 2016-04-26 US claimed
US-20150153645-A1 PHOTOSENSITIVE OLIGOMER FOR PHOTOSENSITIVE RESIST, METHOD FOR PREPARING THE SAME, AND NEGATIVE PHOTOSENSITIVE RESIST RESIN COMPOSITION BOE TECHNOLOGY GROUP CO., LTD. (CN) 2015-06-04 US claimed
US-9512242-B2 Polymerizable oligomer and photoresist composition comprising the same BOE TECHNOLOGY GROUP CO., LTD. (CN) 2016-12-06 US disclosed
US-20160137758-A1 POLYMERIZABLE OLIGOMER AND PHOTORESIST COMPOSITION COMPRISING THE SAME BOE TECHNOLOGY GROUP CO., LTD. (CN) 2016-05-19 US disclosed
US-9323151-B2 Photosensitive oligomer for photosensitive resist, method for preparing the same, and negative photosensitive resist resin composition BOE TECHNOLOGY GROUP CO., LTD. (CN) 2016-04-26 US disclosed
US-20150153645-A1 PHOTOSENSITIVE OLIGOMER FOR PHOTOSENSITIVE RESIST, METHOD FOR PREPARING THE SAME, AND NEGATIVE PHOTOSENSITIVE RESIST RESIN COMPOSITION BOE TECHNOLOGY GROUP CO., LTD. (CN) 2015-06-04 US disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed