SCHEMBL21101830

SCHEMBL21101830

C=CC(=O)OCCCCCC[SiH2]C(OC)OC

nearest known ligand 0.59

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 9/20 0.59
ALDH1A1 P00352 4/20 0.59
CYP3A4 P08684 2/20 0.59
HPGD P15428 1/20 0.50
TP53 P04637 3/20 0.42
HIF1A Q16665 3/20 0.42
HSD17B10 Q99714 1/20 0.42
THRB P10828 2/20 0.36
HCAR2 Q8TDS4 3/20 0.35
ATM Q13315 1/20 0.33
MAPK1 P28482 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16537404 1.00 TSHR (0.59) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL26918864 1.00 TSHR (0.59) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL29402140 1.00 TSHR (0.59) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL16538074 0.98 TSHR (0.56) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL140890 0.94 TSHR (0.53) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL733860 0.87 TSHR (0.47) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL16537215 0.85 TSHR (0.56) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL21066706 0.85 TSHR (0.56) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL16537094 0.83 TSHR (0.53) TSHRALDH1A1CYP3A4HPGDTP53
SCHEMBL21291808 0.83 HCAR2 (0.41) TSHRALDH1A1CYP3A4HPGDHCAR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11094899-B2 Method for manufacturing field effect transistor and method for manufacturing wireless communication device TORAY INDUSTRIES, INC. 2021-08-17 US disclosed
CN-109964327-B Field-effect transistor, method for manufacturing same, wireless communication device using same, and commodity label 东丽株式会社 2020-05-19 CN disclosed
EP-3514822-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE Toray Industries, Inc. (JP) 2019-07-24 EP disclosed
CN-109964327-A Field effect transistor, its manufacturing method, wireless telecom equipment and Commercial goods labels using it 东丽株式会社 2019-07-02 CN disclosed
US-20190198786-A1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2019-06-27 US disclosed