SCHEMBL2113231

SCHEMBL2113231

OCCCCCCCCc1c2ccccc2cc2ccccc12

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 1/20 0.48
L3MBTL1 Q9Y468 1/20 0.48
KDM4E B2RXH2 5/20 0.42
ALDH1A1 P00352 5/20 0.42
HSD17B10 Q99714 4/20 0.42
HPGD P15428 4/20 0.42
POLB P06746 3/20 0.42
MAPT P10636 2/20 0.42
TSHR P16473 2/20 0.42
GAA P10253 1/20 0.42
CYP1A2 P05177 3/20 0.39
CYP2C19 P33261 2/20 0.38
MEN1 O00255 2/20 0.38
KMT2A Q03164 2/20 0.38
GLA P06280 1/20 0.38
GPR35 Q9HC97 2/20 0.38
CYP2C9 P11712 1/20 0.37
TRPM4 Q8TD43 1/20 0.36
CNR2 P34972 1/20 0.36
HTT P42858 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18098077 1.00 HTR2A (0.48) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL2113583 1.00 HTR2A (0.48) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL241214 0.98 HTR2A (0.50) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL243406 0.92 HTR2A (0.52) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL2314010 0.91 HTR2A (0.44) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL7874386 0.90 HTR2A (0.58) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL7877797 0.90 HTR2A (0.58) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL7875750 0.88 HTR2A (0.60) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL2307685 0.84 GPR84 (0.39) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10
SCHEMBL240651 0.84 HTR2A (0.56) HTR2AL3MBTL1KDM4EALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US claimed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US claimed
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 US disclosed
US-20020077426-A1 Protective coating composition for dual damascene process TOKYO OHKA KOGYO CO., LTD. (JP) 2002-06-20 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
US-20010049072-A1 Undercoating composition for photolithographic resist HIROSAKI TAKAKO (JP) 2001-12-06 US disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed