Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 1/20 | 0.41 |
| ▸ | PPARG | P37231 | 3/20 | 0.40 |
| ▸ | PPARA | Q07869 | 3/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 3/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.40 |
| ▸ | TP53 | P04637 | 1/20 | 0.40 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.40 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.40 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.40 |
| ▸ | GMNN | O75496 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | ALOX5 | P09917 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2113229 | 0.98 | MAPT (0.43) | MAPTPPARGPPARAKMT2AKDM4E | |
| SCHEMBL22288182 | 0.95 | TACR3 (0.41) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL241213 | 0.89 | MEN1 (0.40) | PPARGPPARAKMT2AKDM4EL3MBTL1 | |
| SCHEMBL8207670 | 0.86 | MAPT (0.43) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL10361949 | 0.84 | MAPT (0.45) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL22288178 | 0.83 | MAPT (0.41) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL8211957 | 0.82 | TACR3 (0.42) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL243405 | 0.82 | LMNA (0.47) | MAPTKMT2AKDM4EL3MBTL1MEN1 | |
| SCHEMBL8211958 | 0.78 | NQO1 (0.45) | PPARGPPARAKMT2AKDM4EL3MBTL1 | |
| SCHEMBL1611932 | 0.78 | MAPT (0.38) | MAPTKMT2AKDM4EL3MBTL1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8158568-B2 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-17 | — | — | US | disclosed |
| EP-1641908-B1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2010-11-17 | — | — | EP | disclosed |
| US-20100248477-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith | YOKOI SHIGERU | 2010-09-30 | — | — | US | disclosed |
| US-20100051582-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2010-03-04 | — | — | US | disclosed |
| US-20090156005-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2009-06-18 | — | — | US | disclosed |
| US-7442675-B2 | Cleaning composition and method of cleaning semiconductor substrate | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-28 | — | — | US | disclosed |
| US-7179399-B2 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20060241012-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2006-10-26 | — | — | US | disclosed |
| EP-1641908-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-04-05 | — | — | EP | disclosed |
| WO-2004113486-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-12-29 | — | — | WO | disclosed |
| US-20040121260-A1 | Base material for lithography | TOKYO OHKA KOGYO CO., LTD. | 2004-06-24 | — | — | US | disclosed |
| US-6693049-B2 | FILLING WITH AN OXYALKYLATED MELAMINE, BENZOGUANAMINE, ACETOGUANAMINE, GLYCOL URYL, UREA, THIOUREA, GUANIDINE, ALKYLENEUREA OR SUCCINYLAMIDE AND HEATING AT 150-250 C, WHEREBY NO BUBBLE IS GENERATED WHEN THE FINE HOLE IS FILLED. | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-6689535-B2 | A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM | TOKYO OHKA KOGYO CO., LTD (JP) | 2004-02-10 | — | — | US | disclosed |
| US-6599682-B2 | Controlling refractive index and light absorption coefficient of the antireflection coating film by appropriately selecting the types of compositions; films thickness very small | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-07-29 | — | — | US | disclosed |
| US-20030032280-A1 | Method for filling fine hole | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| US-6515073-B2 | Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| US-20020182360-A1 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020055064-A1 | Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-09 | — | — | US | disclosed |
| US-20010044080-A1 | Method for forming a finely patterned photoresist layer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-22 | — | — | US | disclosed |
| US-20010036998-A1 | Anti-reflective coating-forming composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |