SCHEMBL2115630

SCHEMBL2115630

Cc1cc(O)c(O)c(O)c1S(=O)(=O)c1c(C)cc(O)c(O)c1O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 4/20 0.43
KDM4E B2RXH2 3/20 0.43
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
USP2 O75604 1/20 0.43
RAPGEF4 Q8WZA2 4/20 0.41
ALDH1A1 P00352 4/20 0.41
HPGD P15428 2/20 0.41
RECQL P46063 1/20 0.41
SELL P14151 1/20 0.39
SELP P16109 1/20 0.39
SELE P16581 1/20 0.39
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
MMP1 P03956 1/20 0.38
MMP2 P08253 1/20 0.38
MMP9 P14780 1/20 0.38
MMP8 P22894 1/20 0.38
MMP13 P45452 1/20 0.38
CYP3A4 P08684 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19194063 0.84 MAPT (0.42) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL9460311 0.74 RAPGEF4 (0.47) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL31028377 0.73 CA1 (0.43) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL9297946 0.73 RAPGEF4 (0.55) MEN1KMT2ARAPGEF4ALDH1A1CA1
SCHEMBL2114380 0.73 CYP3A4 (0.47) MAPTMEN1KMT2ARAPGEF4ALDH1A1
SCHEMBL19194198 0.71 MAPT (0.47) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL19193970 0.71 MAPT (0.47) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL634558 0.69 SELL (0.50) MAPTKDM4EMEN1KMT2AUSP2
SCHEMBL27569999 0.68 RECQL (0.38) MAPTKDM4EMEN1KMT2AALDH1A1
SCHEMBL28750510 0.68 SELL (0.39) MAPTKDM4EMEN1KMT2AUSP2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
US-7179399-B2 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2007-02-20 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-6689535-B2 A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM TOKYO OHKA KOGYO CO., LTD (JP) 2004-02-10 US disclosed
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US disclosed
CN-1396648-A Immersion method of minute hole TOKYO APPLIC CHEMICAL IND CO L (JP) 2003-02-12 CN disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20020182360-A1 Material for forming protective film TOKYO OHKA KOGYO CO., LTD. (JP) 2002-12-05 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
US-20010049072-A1 Undercoating composition for photolithographic resist HIROSAKI TAKAKO (JP) 2001-12-06 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed