Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP3A4 | P08684 | 8/20 | 0.47 |
| ▸ | ACHE | P22303 | 2/20 | 0.47 |
| ▸ | RAPGEF4 | Q8WZA2 | 3/20 | 0.46 |
| ▸ | ALOX15 | P16050 | 3/20 | 0.41 |
| ▸ | MAOA | P21397 | 2/20 | 0.41 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.41 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.41 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.41 |
| ▸ | HTR2B | P41595 | 1/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | CYTH2 | Q99418 | 3/20 | 0.40 |
| ▸ | PIM1 | P11309 | 2/20 | 0.39 |
| ▸ | NUAK1 | O60285 | 1/20 | 0.39 |
| ▸ | IGF1R | P08069 | 1/20 | 0.39 |
| ▸ | SRC | P12931 | 1/20 | 0.39 |
| ▸ | KDR | P35968 | 1/20 | 0.39 |
| ▸ | PLK1 | P53350 | 1/20 | 0.39 |
| ▸ | PKN1 | Q16512 | 1/20 | 0.39 |
| ▸ | AURKB | Q96GD4 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9297946 | 0.88 | RAPGEF4 (0.55) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL2114012 | 0.83 | CYP3A4 (0.40) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL9711390 | 0.76 | CYP3A4 (0.44) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL13548324 | 0.76 | MAPK1 (0.47) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL10894374 | 0.75 | RAPGEF4 (0.41) | CYP3A4RAPGEF4ALOX15MAOACHRM1 | |
| SCHEMBL10889226 | 0.75 | FABP3 (0.44) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL13649887 | 0.74 | CYP3A4 (0.48) | CYP3A4ACHERAPGEF4ALOX15MAOA | |
| SCHEMBL34468636 | 0.73 | CYP3A4 (0.42) | CYP3A4ACHEALOX15MAOATDP1 | |
| SCHEMBL2115630 | 0.73 | MAPT (0.43) | CYP3A4RAPGEF4ALOX15MEN1KMT2A | |
| SCHEMBL22077602 | 0.73 | RAPGEF4 (0.46) | CYP3A4ACHERAPGEF4ALOX15MAOA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8158568-B2 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-17 | — | — | US | disclosed |
| EP-1641908-B1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2010-11-17 | — | — | EP | disclosed |
| US-20100248477-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith | YOKOI SHIGERU | 2010-09-30 | — | — | US | disclosed |
| US-20100051582-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2010-03-04 | — | — | US | disclosed |
| US-20090156005-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2009-06-18 | — | — | US | disclosed |
| US-7442675-B2 | Cleaning composition and method of cleaning semiconductor substrate | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-28 | — | — | US | disclosed |
| US-7179399-B2 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20060241012-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2006-10-26 | — | — | US | disclosed |
| EP-1641908-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-04-05 | — | — | EP | disclosed |
| WO-2004113486-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-12-29 | — | — | WO | disclosed |
| US-6544717-B2 | Antireflective coating | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-04-08 | — | — | US | disclosed |
| US-20030032280-A1 | Method for filling fine hole | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| CN-1396648-A | Immersion method of minute hole | TOKYO APPLIC CHEMICAL IND CO L (JP) | 2003-02-12 | — | — | CN | disclosed |
| US-6515073-B2 | Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| US-20020182360-A1 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020055064-A1 | Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-09 | — | — | US | disclosed |
| US-20010049072-A1 | Undercoating composition for photolithographic resist | HIROSAKI TAKAKO (JP) | 2001-12-06 | — | — | US | disclosed |
| US-20010036998-A1 | Anti-reflective coating-forming composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-6284428-B1 | FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES | TOKYO OHKA KOGYO CO., LTD, (JP) | 2001-09-04 | — | — | US | disclosed |
| US-20010018163-A1 | Undercoating composition for photolithographic resist | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-08-30 | — | — | US | disclosed |