⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5028751 | 0.87 | — | — | |
| SCHEMBL2119594 | 0.87 | — | — | |
| SCHEMBL61894 | 0.87 | — | — | |
| SCHEMBL29814754 | 0.87 | — | — | |
| SCHEMBL560998 | 0.87 | — | — | |
| SCHEMBL9898340 | 0.75 | — | — | |
| Arsenic SCHEMBL347971 | 0.75 | — | — | |
| SCHEMBL9898240 | 0.75 | — | — | |
| SCHEMBL1204245 | 0.75 | — | — | |
| SCHEMBL3746078 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11917930-B2 | Resistance change device and storage device | KIOXIA CORPORATION (JP) | 2024-02-27 | — | — | US | claimed |
| US-20230085635-A1 | RESISTANCE CHANGE DEVICE AND STORAGE DEVICE | KIOXIA CORPORATION (JP) | 2023-03-23 | — | — | US | claimed |
| US-20220302385-A1 | RESISTANCE CHANGE DEVICE AND STORAGE DEVICE | KIOXIA CORPORATION (JP) | 2022-09-22 | — | — | US | claimed |
| US-12310262-B2 | Phase change memory with encapsulated phase change element | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2025-05-20 | — | — | US | disclosed |
| US-20240147876-A1 | THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR ARTIFICIAL INTELLIGENCE APPLICATION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2024-05-02 | — | — | US | disclosed |
| US-11917930-B2 | Resistance change device and storage device | KIOXIA CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11817389-B2 | Multi-metal interconnects for semiconductor device structures | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2023-11-14 | — | — | US | disclosed |
| US-20230144050-A1 | PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2023-05-11 | — | — | US | disclosed |
| US-20220302385-A1 | RESISTANCE CHANGE DEVICE AND STORAGE DEVICE | KIOXIA CORPORATION (JP) | 2022-09-22 | — | — | US | disclosed |
| US-8792265-B2 | Phase change material for a phase change memory device and method for adjusting the resistivity of the material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2014-07-29 | — | — | US | disclosed |
| EP-2246915-B1 | Phase change material for a phase change memory device and method for adjusting the resistivity of the material | TAIWAN SEMICONDUCTOR MFG (TW) | 2013-07-31 | — | — | EP | disclosed |
| US-20120091416-A1 | Phase Change Material for a Phase Change Memory Device and Method for Adjusting the Resistivity of the Material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2012-04-19 | — | — | US | disclosed |
| US-7838326-B2 | Methods of fabricating semiconductor device including phase change layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-11-23 | — | — | US | disclosed |
| WO-2010125540-A2 | PHASE CHANGE MATERIAL FOR USE IN A PHASE CHANGE MEMORY DEVICE, PHASE CHANGE MEMORY DEVICE, AND METHOD FOR ADJUSTING A RESISTIVITY OF A PHASE CHANGE MATERIAL FOR USE IN A PHASE CHANGE MEMORY DEVICE | NXP B.V. (NL) | 2010-11-04 | — | — | WO | disclosed |
| EP-2246915-A1 | Phase change material for a phase change memory device and method for adjusting the resistivity of the material | NXP B.V. (NL) | 2010-11-03 | — | — | EP | disclosed |
| US-20090233421-A1 | Methods of Fabricating Semiconductor Device Including Phase Change Layer | SAMSUNG ELECTRONICS CO., LTD, | 2009-09-17 | — | — | US | disclosed |