⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2119594 | 1.00 | — | — | |
| SCHEMBL347972 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL3439102 | 0.87 | — | — | |
| SCHEMBL3279160 | 0.87 | — | — | |
| SCHEMBL9898240 | 0.87 | — | — | |
| SCHEMBL9898340 | 0.87 | — | — | |
| SCHEMBL1205976 | 0.87 | — | — | |
| Arsenic SCHEMBL347971 | 0.87 | — | — | |
| SCHEMBL1204245 | 0.87 | — | — | |
| SCHEMBL3274556 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2536 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150589-A1 | PHASE CHANGE MEMORY CELL HAVING A HEATER WITH ACTIVATED RESISTANCE IN TEMPERATURE, AND IN-MEMORY COMPUTATION CIRCUIT USING SUCH A PHASE CHANGE MEMORY CELL | STMICROELECTRONICS INTERNATIONAL N.V. (CH) | 2026-05-28 | — | — | US | claimed |
| EP-4750301-A2 | PHASE CHANGE MEMORY CELL HAVING A HEATER WITH ACTIVATED RESISTANCE IN TEMPERATURE, AND IN-MEMORY COMPUTATION CIRCUIT USING SUCH A PHASE CHANGE MEMORY CELL | STMicroelectronics International N.V. (CH) | 2026-05-27 | — | — | EP | claimed |
| CN-122094405-A | Phase change memory cell and in-memory computing circuit | — | 2026-05-26 | — | — | CN | claimed |
| CN-116130463-B | Electromagnetic radiation resistant semiconductor device and electromagnetic radiation resistant method | 晋芯电子制造(山西)有限公司 | 2026-05-22 | — | — | CN | claimed |
| CN-122063793-A | Near infrared tunable super surface based on germanium antimony tellurium phase change material | 桂林电子科技大学 | 2026-05-19 | — | — | CN | claimed |
| CN-122043792-A | Phase shifter, optical device, modulator, and optical apparatus | 华为技术有限公司 | 2026-05-15 | — | — | CN | claimed |
| US-12615970-B2 | Ultra-thin phase-change memory device with lateral electrode configuration | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2026-04-28 | — | — | US | claimed |
| US-20260081356-A1 | ANTENNA ELEMENT, ANTENNA ARRAY, COMMUNICATION APPARATUS, AND CONTROL METHOD | HUAWEI TECHNOLOGIES CO., LTD. (CN) | 2026-03-19 | — | — | US | claimed |
| EP-4708564-A1 | ANTENNA UNIT, ANTENNA ARRAY, COMMUNICATION DEVICE, AND CONTROL METHOD | Huawei Technologies Co., Ltd. (CN) | 2026-03-11 | — | — | EP | claimed |
| US-20260068546-A1 | MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE | APPLIED MATERIALS, INC. (US) | 2026-03-05 | — | — | US | claimed |
| CN-101335258-A | Laser fuse device capable of reprogramming and method for continuously regulating resistance of fuse wire | SHANGHAI INST MICROSYS & INF (CN) | 2008-12-31 | — | — | CN | claimed |
| CN-101299453-A | Nano composite phase-changing material and preparation method thereof | SHANGHAI INST MICROSYS & INF (CN) | 2008-11-05 | — | — | CN | claimed |
| WO-2008124444-A1 | METHODS TO FORM WIDE HEATER TRENCHES AND TO FORM MEMORY CELLS TO ENGAGE HEATERS | MARVELL WORLD TRADE LTD. (BB) | 2008-10-16 | — | — | WO | claimed |
| US-20080246015-A1 | METHOD TO FORM HIGH EFFICIENCY GST CELL USING A DOUBLE HEATER CUT | MARVELL ASIA PTE, LTD. (SG) | 2008-10-09 | — | — | US | claimed |
| CN-100386882-C | Nonvolatile memory and operating method thereof | MACRONIX INT CO LTD (CN) | 2008-05-07 | — | — | CN | claimed |
| CN-101110238-A | Rewritable optical disc | RITEK CORP (CN) | 2008-01-23 | — | — | CN | claimed |
| EP-1878064-A1 | METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY | International Business Machines Corporation (US) | 2008-01-16 | — | — | EP | claimed |
| US-20070159868-A1 | Nonvolatile memory device | SHARP KABUSHIKI KAISHA (JP) | 2007-07-12 | — | — | US | claimed |
| WO-2006121473-A1 | METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-11-16 | — | — | WO | claimed |
| US-20060249724-A1 | Method and structure for Peltier-controlled phase change memory | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-11-09 | — | — | US | claimed |