SCHEMBL21374953

SCHEMBL21374953

CC1C2CC3C1OC(=O)C3(C(F)(F)F)C2

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6414821 0.83 — —
SCHEMBL25701218 0.76 — —
SCHEMBL25701233 0.74 — —
SCHEMBL9973372 0.74 HMGCR (0.34) —
SCHEMBL13057396 0.73 MAPT (0.31) —
SCHEMBL16743494 0.73 MAPT (0.31) —
SCHEMBL18872442 0.73 MAPT (0.31) —
SCHEMBL19249994 0.73 MAPT (0.31) —
SCHEMBL18022193 0.73 MAPT (0.31) —
SCHEMBL19848753 0.73 MAPT (0.31) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 — — US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 — — US disclosed
US-20190285983-A1 RADIATION-SENSITIVE RESIN COMPOSITION, ONIUM SALT COMPOUND AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2019-09-19 — — US disclosed
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