⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28375006 | 1.00 | — | — | |
| SCHEMBL27074543 | 0.87 | — | — | |
| SCHEMBL6205967 | 0.87 | — | — | |
| Water SCHEMBL22169039 | 0.87 | — | — | |
| Methane SCHEMBL18171536 | 0.87 | — | — | |
| SCHEMBL17454575 | 0.87 | — | — | |
| SCHEMBL21773368 | 0.87 | — | — | |
| SCHEMBL14764773 | 0.87 | — | — | |
| SCHEMBL428692 | 0.82 | — | — | |
| SCHEMBL23709 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118050842-A | Optical filter | 采钰科技股份有限公司 | 2024-05-17 | — | — | CN | claimed |
| CN-112635391-B | Strained germanium tin silicon substrate on insulator, transistor and preparation method thereof | 广东省大湾区集成电路与系统应用研究院 | 2023-07-18 | — | — | CN | claimed |
| CN-115394893-A | Method for forming semiconductor substrate, semiconductor substrate and semiconductor laser | 广东省大湾区集成电路与系统应用研究院 | 2022-11-25 | — | — | CN | claimed |
| CN-110137320-B | Near-infrared heterojunction light emitting diode array and forming method thereof | 清华大学 | 2021-07-23 | — | — | CN | claimed |
| CN-112635391-A | Strained germanium tin silicon substrate on insulator, transistor and preparation method of strained germanium tin silicon substrate | 广东省大湾区集成电路与系统应用研究院 | 2021-04-09 | — | — | CN | claimed |
| CN-110137320-A | Near-infrared heterojunction light-emitting diode array and forming method thereof | 清华大学 | 2019-08-16 | — | — | CN | claimed |
| CN-106960838-B | Electrostatic protection device and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2019-07-02 | — | — | CN | claimed |
| CN-109037072-A | Fin field effect pipe and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2018-12-18 | — | — | CN | claimed |
| CN-105720129-B | High speed germanium/silicon avalanche photodiode | 硅光电科技股份有限公司 | 2018-09-18 | — | — | CN | claimed |
| CN-106960838-A | Electrostatic protection device and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2017-07-18 | — | — | CN | claimed |
| US-7907848-B1 | Semiconductor photonoic nano communication link method | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) | 2011-03-15 | — | — | US | claimed |
| US-20250351406-A1 | Dielectric Layer on Semiconductor Device and Method of Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-12336211-B2 | Dielectric layer on semiconductor device and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-17 | — | — | US | disclosed |
| US-20240395912-A1 | Dielectric Layer on Semiconductor Device and Method of Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-28 | — | — | US | disclosed |
| CN-118829900-A | Lidar system with angle of incidence determination | 卢米诺技术公司 | 2024-10-22 | — | — | CN | disclosed |
| US-7029980-B2 | Method of manufacturing SOI template layer | FREESCALE SEMICONDUCTOR INC. (US) | 2006-04-18 | — | — | US | disclosed |
| WO-2005034191-A2 | TEMPLATE LAYER FORMATION | FREESCALE SEMICONDUCTOR, INC. (US) | 2005-04-14 | — | — | WO | disclosed |
| US-20050070053-A1 | Template layer formation | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2005-03-31 | — | — | US | disclosed |
| US-20050070057-A1 | Semiconductor layer formation | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2005-03-31 | — | — | US | disclosed |
| US-20050070056-A1 | SOI template layer | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2005-03-31 | — | — | US | disclosed |