⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL430914 | 1.00 | — | — | |
| SCHEMBL352680 | 1.00 | — | — | |
| SCHEMBL28669843 | 1.00 | — | — | |
| SCHEMBL428692 | 1.00 | — | — | |
| SCHEMBL427351 | 1.00 | — | — | |
| SCHEMBL17707724 | 1.00 | — | — | |
| SCHEMBL28793381 | 1.00 | — | — | |
| SCHEMBL3760803 | 1.00 | — | — | |
| SCHEMBL23673298 | 0.82 | — | — | |
| SCHEMBL21380724 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 213229 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146329-A1 | SEMICONDUCTOR PROCESSING SYSTEMS, CHEMICAL VAPOR DEPOSITION (CVD) REACTORS AND METHODS FOR DEPOSITING MATERIAL ON SEMICONDUCTOR SUBSTRATES WITH UNIFORM TEMPERATURE AND GAS FLOW ACROSS THE SUBSTRATE SURFACE | TOKYO ELECTRON LIMITED (JP) | 2026-05-28 | — | — | US | claimed |
| US-20260150266-A1 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | SK Hynix Inc. (KR) | 2026-05-28 | — | — | US | claimed |
| US-20260146326-A1 | SEMICONDUCTOR PROCESSING SYSTEMS, CHEMICAL VAPOR DEPOSITION (CVD) REACTORS AND METHODS FOR DEPOSITING MATERIAL ON SEMICONDUCTOR SUBSTRATES WITH UNIFORM TEMPERATURE AND GAS FLOW ACROSS THE SUBSTRATE SURFACE | TOKYO ELECTRON LIMITED (JP) | 2026-05-28 | — | — | US | claimed |
| US-20260150582-A1 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME | SK Hynix Inc. (KR) | 2026-05-28 | — | — | US | claimed |
| US-20260150394-A1 | TRANSMISSION GATE STRUCTURES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-28 | — | — | US | claimed |
| US-20260150649-A1 | GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACKSIDE DIELECTRIC ISOLATION SCHEME | APPLIED MATERIALS, INC. (US) | 2026-05-28 | — | — | US | claimed |
| US-20260150327-A1 | SEMICONDUCTOR NANOSTRUCTURES AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-28 | — | — | US | claimed |
| US-20260150592-A1 | METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE | SK Hynix Inc. (KR) | 2026-05-28 | — | — | US | claimed |
| EP-4750246-A1 | RESISTOR FOR III-V SEMICONDUCTOR DEVICE | GlobalFoundries U.S. Inc. (US) | 2026-05-27 | — | — | EP | claimed |
| EP-4750304-A1 | METHOD OF FORMING A SILICON ON INSULATOR SUBSTRATE | SK hynix Inc. (KR) | 2026-05-27 | — | — | EP | claimed |
| US-4595644-A | Smooth distribution concentration of nitrogen in direction of layer thickness | CANON KABUSHIKI KAISHA (JP) | 1986-06-17 | — | — | US | claimed |
| US-4572882-A | LIGHT RECEIVING LAYER CONTAINING NITROGEN ATOMS | CANON KABUSHIKI KAISHA (JP) | 1986-02-25 | — | — | US | claimed |
| EP-0160433-A2 | Thermoelectric generator using variable geometry with support pedestals of materials different from the basic thermoelectric semiconductor elements | OMNIMAX ENERGY CORPORATION (US) | 1985-11-06 | — | — | EP | claimed |
| EP-0154997-A2 | A high resolution image sensor array using amorphous photo-diodes | NEC CORPORATION (JP) | 1985-09-18 | — | — | EP | claimed |
| EP-0146830-A2 | Additive for metallurgical liquids, and method and device for the preparation thereof | O.E.T.-METALCONSULT S.r.l. (IT) | 1985-07-03 | — | — | EP | claimed |
| US-4495262-A | SILICON CARBIDE AND SILICON-GERMANIUM LAYERS, BOTH HYDROGENATED AND-OR FLUORINATED | KONISHIROKU PHOTO INDUSTRY CO., LTD. (JP) | 1985-01-22 | — | — | US | claimed |
| US-4485121-A | DECOMPOSING MIXED GAS TO FORM DOPE | TOKYO INSTITUTE OF TECHNOLOGY (JP) | 1984-11-27 | — | — | US | claimed |
| US-4357183-A | Heteroepitaxy of germanium silicon on silicon utilizing alloying control | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1982-11-02 | — | — | US | claimed |
| US-3985590-A | PROCESS FOR FORMING HETEROEPITAXIAL STRUCTURE | HARRIS CORPORATION (US) | 1976-10-12 | — | — | US | claimed |
| US-3979271-A | Deposition of solid semiconductor compositions and novel semiconductor materials | WESTINGHOUSE ELECTRIC CORPORATION (US) | 1976-09-07 | — | — | US | claimed |