SCHEMBL213932

SCHEMBL213932

C=C(C)C(=O)OC1(CCC)C2CC3CC(C2)CC1C3

nearest known ligand 0.40

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.33
ALDH1A1 P00352 3/20 0.33
THRB P10828 1/20 0.31
CYP17A1 P05093 1/20 0.31
CYP19A1 P11511 1/20 0.31
HSD11B1 P28845 1/20 0.30
MEN1 O00255 1/20 0.30
MAPT P10636 1/20 0.30
KMT2A Q03164 1/20 0.30
ATM Q13315 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825473 0.91 TSHR (0.38) TSHRALDH1A1
SCHEMBL4401855 0.90 TSHR (0.41) TSHRALDH1A1
SCHEMBL44041 0.89 ALDH1A1 (0.35) TSHRALDH1A1THRBCYP17A1CYP19A1
SCHEMBL4401860 0.88 TSHR (0.43) TSHRTHRB
SCHEMBL4399200 0.88 TSHR (0.43) TSHRTHRB
SCHEMBL4403811 0.88 TSHR (0.43) TSHRTHRB
SCHEMBL10064095 0.88 ALDH1A1 (0.33) ALDH1A1CYP17A1CYP19A1HSD11B1
SCHEMBL30421164 0.87 TSHR (0.35) TSHRALDH1A1THRBHSD11B1
SCHEMBL14523967 0.86 CYP17A1 (0.30) CYP17A1CYP19A1
SCHEMBL685775 0.86 TSHR (0.35) TSHRALDH1A1THRBCYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 397 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025127098-A1 PHASE DIFFERENCE FILM COMPOSITION AND SINGLE-LAYER PHASE DIFFERENCE MATERIAL 日産化学株式会社 2025-06-19 WO disclosed
WO-2025127092-A1 LIQUID CRYSTAL ALIGNMENT AGENT, LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY ELEMENT 日産化学株式会社 2025-06-19 WO disclosed
US-20250189896-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-06-12 US disclosed
CN-120051729-A Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display element 日产化学株式会社 2025-05-27 CN disclosed
WO-2025100122-A1 ELECTRODE PERIPHERAL EMBEDDING MATERIAL, PRE-BAKED FILM OF ELECTRODE PERIPHERAL EMBEDDING MATERIAL, METHOD FOR PRODUCING PRE-BAKED FILM OF ELECTRODE PERIPHERAL EMBEDDING MATERIAL, AND MICRO-LED DISPLAY ELEMENT 日産化学株式会社 2025-05-15 WO disclosed
US-20250136734-A1 PROTECTIVE-FILM FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-05-01 US disclosed
CN-119866360-A Polymer composition and single layer phase difference material 日产化学株式会社 2025-04-22 CN disclosed
CN-119856108-A Liquid crystal aligning agent and liquid crystal display element 日产化学株式会社 2025-04-18 CN disclosed
CN-119768473-A Polymer composition and single layer phase difference material 日产化学株式会社 2025-04-04 CN disclosed
CN-116323702-B Method for producing single-layer phase difference material 日产化学株式会社 2025-04-01 CN disclosed
US-20060234156-A1 Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-10-19 US disclosed
US-20060210915-A1 Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-21 US disclosed
EP-1662769-A1 COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP Nissan Chemical Industries, Ltd. (JP) 2006-05-31 EP disclosed
EP-1617289-A1 COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-01-18 EP disclosed
US-6884566-B2 Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-26 US disclosed
US-20040096772-A1 Novel copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio TOKYO OHKA KOGYO CO., LTD. 2004-05-20 US disclosed
US-20030186171-A1 Novel copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio TOKYO OHKA KOGYO CO., LTD. 2003-10-02 US disclosed
US-6517993-B2 Radiation transparent; sensitivity TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-11 US disclosed
US-20020031719-A1 Novel copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio TOKYO OHKA KOGYO CO., LTD. 2002-03-14 US disclosed
US-20020031720-A1 Novel copolymer, photoresist composition , and process for forming resist pattern with high aspect ratio TOKYO OHKA KOGYO CO., LTD. 2002-03-14 US disclosed