SCHEMBL21396926

SCHEMBL21396926

O=C(CC1CCCCC1)C(C(=O)C1CCCCC1)S(=O)(=O)O

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
EPHX1 P07099 2/20 0.36
HPGD P15428 1/20 0.36
KMT2A Q03164 1/20 0.36
CES2 O00748 1/20 0.33
CES1 P23141 1/20 0.33
SLC1A3 P43003 2/20 0.31
SLC1A2 P43004 2/20 0.31
SLC1A1 P43005 2/20 0.31
EPHX2 P34913 2/20 0.31
CA2 P00918 1/20 0.31
CHRNB2 P17787 3/20 0.30
CHRNB4 P30926 3/20 0.30
CHRNA3 P32297 3/20 0.30
CHRNA4 P43681 3/20 0.30
GRIN1 Q05586 1/20 0.30
GRIN2A Q12879 1/20 0.30
GRM1 Q13255 1/20 0.30
KEAP1 Q14145 1/20 0.30
NFE2L2 Q16236 1/20 0.30
NPC1 O15118 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21398840 0.88 EPHX1 (0.41) EPHX1HPGDKMT2ASLC1A3SLC1A2
SCHEMBL21396655 0.77 EPHX1 (0.33) EPHX1HPGDKMT2A
SCHEMBL15614016 0.70 ALDH1A1 (0.38) EPHX1HPGDKMT2ASLC1A3SLC1A2
SCHEMBL21398830 0.69 CA12 (0.38) EPHX1KMT2ASLC1A3SLC1A2SLC1A1
SCHEMBL21396998 0.69 EPHX2 (0.33) EPHX1CES2CES1EPHX2
SCHEMBL21374608 0.67 LMNA (0.47) SLC1A3SLC1A2SLC1A1
SCHEMBL17207570 0.66 HPGD (0.45) EPHX1HPGDKMT2ASLC1A3SLC1A2
SCHEMBL26296878 0.66 EPHX1 (0.45) EPHX1HPGDKMT2ASLC1A3SLC1A2
Sulfuric Acid SCHEMBL27553285 0.66 KMT2A (0.45) EPHX1HPGDKMT2ASLC1A3SLC1A2
SCHEMBL8228265 0.66 EPHX1 (0.45) EPHX1HPGDKMT2ASLC1A3SLC1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20190294042-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-09-26 US disclosed