SCHEMBL2150052

SCHEMBL2150052

CCc1cc(P)c(CC)c(CC)c1CC

nearest known ligand 0.30

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
▸ NOS3 P29474 1/20 0.30
▸ NOS1 P29475 1/20 0.30
▸ NOS2 P35228 1/20 0.30
▸ DHFR P00374 1/20 0.30
▸ GRIN2D O15399 1/20 0.30
▸ GRIN3B O60391 1/20 0.30
▸ GRIN1 Q05586 1/20 0.30
▸ GRIN2A Q12879 1/20 0.30
▸ GRIN2B Q13224 1/20 0.30
▸ GRIN2C Q14957 1/20 0.30
▸ GRIN3A Q8TCU5 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL168554 0.81 GRIN2D (0.36) NOS3NOS1NOS2DHFRGRIN2D
Ammonia Solution, Strong SCHEMBL27455415 0.78 GRIN2D (0.35) NOS3NOS1NOS2DHFRGRIN2D
SCHEMBL5178615 0.78 GRIN2D (0.35) NOS3NOS1NOS2DHFRGRIN2D
Ethylene SCHEMBL27743149 0.76 GRIN2D (0.33) NOS3NOS1NOS2DHFRGRIN2D
SCHEMBL6831030 0.75 GABRA1 (0.32) —
Hydrochloric Acid SCHEMBL5181262 0.75 BCL2 (0.40) —
Bromide SCHEMBL5085462 0.73 GABRA1 (0.31) —
Iodide SCHEMBL5085340 0.73 GABRA1 (0.31) —
Hydrochloric Acid SCHEMBL2965190 0.73 GABRA1 (0.31) —
SCHEMBL8097110 0.72 NOS3 (0.40) NOS3NOS1NOS2DHFRGRIN2D

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8436479-B2 Semiconductor device having a chip bonding using a resin adhesive film and method of manufacturing the same SUMITOMO BAKELITE CO., LTD. (JP) 2013-05-07 — — US disclosed
CN-101370887-B Adhesive tape SUMITOMO BAKELITE CO 2012-01-25 — — CN disclosed
US-20110180939-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE SUMITOMO BAKELITE CO., LTD. (JP) 2011-07-28 — — US disclosed
EP-2341529-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Sumitomo Bakelite Co., Ltd. (JP) 2011-07-06 — — EP disclosed
CN-101370887-A Adhesive tape SUMITOMO BAKELITE CO (JP) 2009-02-18 — — CN disclosed
US-6946421-B2 Phosphonium borate catalyst containing a monovalent cation portion in which four specific groups are bonded to the phosphorus atom and monovalent anion portion in which four specific groups are bonded to boron atom SUMITOMO BAKELITE COMPANY LIMITED (JP) 2005-09-20 — — US disclosed
EP-1130041-B1 EPOXY RESIN COMPOSITION AND SEMICONDUCTOR DEVICE SUMITOMO BAKELITE CO (JP) 2005-06-01 — — EP disclosed
US-6881812-B2 Latent catalyst having a structure of phosphonium borate consisting of a monovalent cation portion in which four specific groups are bonded to the phosphorus atom and a monovalent anion portion in which four specific groups are SUMITOMO BAKELITE COMPANY, LTD. (JP) 2005-04-19 — — US disclosed
US-20040034125-A1 Phosphonium borate catalyst containing a monovalent cation portion in which four specific groups are bonded to the phosphorus atom and monovalent anion portion in which four specific groups are bonded to boron atom MIYAKE SUMIYA (JP) 2004-02-19 — — US disclosed
US-6664344-B1 Good in curability and shelf life SUMITOMO BAKELITE COMPANY LIMITED (JP) 2003-12-16 — — US disclosed
US-20030199391-A1 Latent catalyst having a structure of phosphonium borate consisting of a monovalent cation portion in which four specific groups are bonded to the phosphorus atom and a monovalent anion portion in which four specific groups are MIYAKE SUMIYA (JP) 2003-10-23 — — US disclosed
US-6524989-B2 Latent polymerization catalyst consists of phosphonium borate consisting of monovalent cation portion in which four specific groups are bonded to phoshorus atom and a monovalent anion portion in which four specific groups are bonded with B SUMITOMO BAKELITE COMPANY LIMITED (JP) 2003-02-25 — — US disclosed
US-20010037003-A1 Latent polymerization catalyst consists of phosphonium borate consisting of monovalent cation portion in which four specific groups are bonded to phoshorus atom and a monovalent anion portion in which four specific groups are bonded with B MIYAKE SUMIYA (JP) 2001-11-01 — — US disclosed
US-6306792-B1 MIXING WITH WATER, SUBJECTING TO PRESSURE COOKING, MEASURING ELECTROCONDUCTIVITY OF EXTRACTION MIXTURE SUMITOMO BAKELITE COMPANY LIMITED (JP) 2001-10-23 — — US disclosed
US-20010021454-A1 Phosphonium borate MIYAKE SUMIYA (JP) 2001-09-13 — — US disclosed
EP-1130041-A1 EPOXY RESIN COMPOSITION AND SEMICONDUCTOR DEVICE SUMITOMO BAKELITE CO., LTD. (JP) 2001-09-05 — — EP disclosed
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