SCHEMBL2154246

SCHEMBL2154246

CC(C)(C)N(N)C(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL10734038 0.82 ALDH1A1 (0.37)
Bicarbonate SCHEMBL10734019 0.82 ALDH1A1 (0.37)
Sulfuric Acid SCHEMBL7627413 0.79 CA5A (0.38)
Oxalic Acid SCHEMBL10733835 0.79 ALDH1A1 (0.35)
Oxalic Acid SCHEMBL10733846 0.79 ALDH1A1 (0.35)
SCHEMBL9660833 0.70
SCHEMBL7153696 0.67
SCHEMBL12156692 0.65
SCHEMBL3230287 0.64
SCHEMBL15763355 0.57

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 294 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180155827-A1 Synthesis of Metal Nitride Thin Films Materials using Hydrazine Derivatives APPLIED MATERIALS, INC. 2018-06-07 US claimed
US-12622232-B2 Advanced self aligned multiple patterning using tin oxide LAM RESEARCH CORPORATION (US) 2026-05-05 US disclosed
US-20260090293-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RES CORP (US) 2026-03-26 US disclosed
US-12588475-B2 High selectivity doped hardmask films LAM RESEARCH CORPORATION (US) 2026-03-24 US disclosed
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20260047361-A1 METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS NATIONAL TSING HUA UNIVERSITY (TW) 2026-02-12 US disclosed
EP-4651192-A2 UNDERLAYER FOR PHOTORESIST ADHESION AND DOSE REDUCTION Lam Research Corporation (US) 2025-11-19 EP disclosed
US-12474638-B2 Underlayer for photoresist adhesion and dose reduction LAM RESEARCH CORPORATION (US) 2025-11-18 US disclosed
US-20250328076-A1 UNDERLAYER FOR PHOTORESIST ADHESION AND DOSE REDUCTION LAM RES CORP (US) 2025-10-23 US disclosed
US-20250283221-A1 CARRIER RING WITH TABS LAM RES CORP (US) 2025-09-11 US disclosed
WO-2008077020-A2 SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS APPLIED MATERIALS, INC. (US) 2008-06-26 WO disclosed
WO-2007131040-A2 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM APPLIED MATERIALS, INC. (US) 2007-11-15 WO disclosed
US-20070259111-A1 METHOD AND APPARATUS FOR PHOTO-EXCITATION OF CHEMICALS FOR ATOMIC LAYER DEPOSITION OF DIELECTRIC FILM APPLIED MATERIALS, INC. 2007-11-08 US disclosed
WO-2007002040-A2 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS APPLIED MATERIALS, INC. (US) 2007-01-04 WO disclosed
US-20060286774-A1 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS APPLIED MATERIALS. INC. 2006-12-21 US disclosed
US-20060286775-A1 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS APPLIED MATERIALS, INC. 2006-12-21 US disclosed
US-20060286776-A1 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS APPLIED MATERIALS, INC. 2006-12-21 US disclosed
EP-0216990-A2 Foaming and vulcanizing of elastomeric polymers PENNWALT CORPORATION (US) 1987-04-08 EP disclosed
US-4268486-A REACTING WITH A HYDRAZINE COMPOUND AND SEPARATING TRIVALENT CHROMIUM COMPOUNDS OLIN CORPORATION (US) 1981-05-19 US disclosed
US-3962113-A METHOD FOR ACCELERATING OXYGEN REMOVAL EMPLOYING AN AQUEOUS SOLUTION OF AN ALKYL HYDRAZINE OLIN CORPORATION (US) 1976-06-08 US disclosed