SCHEMBL217534

SCHEMBL217534

O=[N+]([O-])S(=O)(=O)OCc1ccccc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 5/20 0.55
CA9 Q16790 4/20 0.55
CA1 P00915 3/20 0.55
CYP19A1 P11511 3/20 0.43
HTT P42858 2/20 0.42
CA12 O43570 2/20 0.42
CA7 P43166 2/20 0.42
CA4 P22748 1/20 0.42
CA5A P35218 1/20 0.42
CA5B Q9Y2D0 1/20 0.42
TSHR P16473 1/20 0.41
AR P10275 2/20 0.40
NPC1 O15118 4/20 0.40
RAB9A P51151 4/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
CA14 Q9ULX7 1/20 0.39
HPGD P15428 2/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
CES2 O00748 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL561014 0.74 CA2 (0.68) CA2CA9CA1CA12CA7
SCHEMBL28624040 0.74 CA2 (0.68) CA2CA9CA1CA12CA7
SCHEMBL28031304 0.74 KMT2A (0.51) CA2CA9CA1CYP19A1HTT
SCHEMBL27724423 0.74 HTT (0.55) CA2CA9CA1CYP19A1HTT
Lithium Ion SCHEMBL29131542 0.74 CA2 (0.61) CA2CA9CA1CA12CA7
Potassium Ion SCHEMBL12483362 0.74 CA2 (0.61) CA2CA9CA1CA12CA7
SCHEMBL5707068 0.74 CA2 (0.61) CA2CA9CA1CA12CA7
SCHEMBL2635217 0.74 CA2 (0.61) CA2CA9CA1CA12CA7
SCHEMBL22529366 0.73 NPC1 (0.46) CA2CA9CA1CYP19A1HTT
SCHEMBL8970631 0.73 HTT (0.66) CA2CA9CA1CYP19A1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1284720-C Lamination and picture composition method utilizing chemical self-assembly process SAMSUNG ELECTRONICS CO LTD (KR) 2006-11-15 CN claimed
CN-1500715-A Lamination and picture composition method utilizing chemical self-assembly process ���ǵ�����ʽ���� 2004-06-02 CN claimed
EP-2913714-B1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING POLYIMIDE RESIN PATTERNS, AND PATTERNED POLYIMIDE RESIN FILM TOKYO OHKA KOGYO CO LTD (JP) 2020-12-09 EP disclosed
CN-110494806-A The manufacturing method of sensitized ray or radiation-sensitive resin composition, resist film, pattern forming method and electronic device FUJIFILM CORP 2019-11-22 CN disclosed
CN-110446952-A Coloring film and its manufacturing method, solid-state imager FUJIFILM CORP 2019-11-12 CN disclosed
CN-110446951-A Structure, composition for forming near-infrared transmitting filter layer, and optical sensor FUJIFILM CORP 2019-11-12 CN disclosed
CN-105073699-B Compounds containing structural units derived from vinyl ether compounds 东京应化工业株式会社 2019-10-25 CN disclosed
CN-110352221-A Composition, film, infrared intercepting filter, solid-state imager, infrared sensor, camera model and new compound 富士胶片株式会社 2019-10-18 CN disclosed
CN-110119068-A Positive type photosensitive organic compound, insulating film and image display device 东友精细化工有限公司 2019-08-13 CN disclosed
CN-104508557-B Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film and the method for manufacturing electronic device 富士胶片株式会社 2019-05-31 CN disclosed
CN-104508563-B Pattern forming method and the electronic device manufacturing method and electronic device for respectively using it 富士胶片株式会社 2019-05-28 CN disclosed
US-20060183051-A1 Positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-17 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
US-20040191479-A1 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-30 US disclosed
CN-1500715-A Lamination and picture composition method utilizing chemical self-assembly process ���ǵ�����ʽ���� 2004-06-02 CN disclosed