SCHEMBL21775832

SCHEMBL21775832

Cc1cc(C(c2cccc(I)c2)c2cc(C)c(O)c(C)c2)cc(C)c1O

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.40
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
PTGS1 P23219 5/20 0.35
PTGS2 P35354 5/20 0.35
ALOX5 P09917 3/20 0.35
TTR P02766 3/20 0.34
SLC6A3 Q01959 3/20 0.34
CYP3A4 P08684 2/20 0.34
CYP2D6 P10635 2/20 0.34
SLC6A2 P23975 2/20 0.34
SLC6A4 P31645 2/20 0.34
KCNH2 Q12809 2/20 0.34
APP P05067 1/20 0.33
LMNA P02545 1/20 0.32
HTT P42858 1/20 0.32
TRPA1 O75762 1/20 0.32
PKM P14618 1/20 0.31
MEN1 O00255 1/20 0.31
GAA P10253 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL758072 0.81 ADRB1 (0.46) ALDH1A1CA1CA2SLC6A3CYP3A4
SCHEMBL29375872 0.81 ADRB1 (0.46) ALDH1A1CA1CA2SLC6A3CYP3A4
SCHEMBL4083168 0.80 IDO1 (0.37) SLC6A3CYP3A4CYP2D6SLC6A2SLC6A4
SCHEMBL21241741 0.79 PTGS1 (0.41) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL12157016 0.79 PTGS1 (0.48) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL2026462 0.79 PTGS1 (0.48) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL14493513 0.79 ESR2 (0.42) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL12323550 0.79 ALDH1A1 (0.41) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL673321 0.78 CA1 (0.55) ALDH1A1CA1CA2PTGS1PTGS2
SCHEMBL23627377 0.77 TTR (0.44) ALDH1A1CA1CA2PTGS1PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2020040161-A1 COMPOUND, COMPOSITION CONTAINING SAME, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING INSULATING FILM 三菱瓦斯化学株式会社 2020-02-27 WO disclosed