⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8201124 | 1.00 | — | — | |
| SCHEMBL9997910 | 1.00 | — | — | |
| SCHEMBL16594173 | 1.00 | — | — | |
| SCHEMBL5041251 | 1.00 | — | — | |
| SCHEMBL16303 | 1.00 | — | — | |
| SCHEMBL7165058 | 1.00 | — | — | |
| SCHEMBL5022891 | 1.00 | — | — | |
| SCHEMBL7903268 | 1.00 | — | — | |
| SCHEMBL712967 | 0.82 | — | — | |
| SCHEMBL56474 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108538838-B | Method for manufacturing semiconductor element | 联华电子股份有限公司 | 2019-11-26 | — | — | CN | claimed |
| CN-108538838-A | Method for manufacturing semiconductor element | 联华电子股份有限公司 | 2018-09-14 | — | — | CN | claimed |
| CN-107338341-A | A kind of solid calcium metal, ferrosilicon and containing rare earth, niobium, vanadium, the high titanium titanium silicon nitride alloyed powder composite core-spun yarn of boron | 浙江宝信新型炉料科技发展有限公司 | 2017-11-10 | — | — | CN | claimed |
| CN-106399635-A | Core-spun yarn containing rare earth, niobium, vanadium, boron high-titanium titanium-silicon nitride alloy | 浙江宝信新型炉料科技发展有限公司 | 2017-02-15 | — | — | CN | claimed |
| CN-101369557-A | Volatile memory and method of manufacturing the same | NANYA TECHNOLOGY CORP (CN) | 2009-02-18 | — | — | CN | claimed |
| CN-1197932-A | Array of thin film actuated mirrors and method for manufacture thereof | DAEWOO ELECTRONICS CO LTD (KR) | 1998-11-04 | — | — | CN | claimed |
| US-5534451-A | THIN FILM TRANSISTORS, HIGH DENSITY INTEGRATED CIRCUITS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 1996-07-09 | — | — | US | claimed |
| CN-111919301-B | Optoelectronic device with electronic components on the back side of a substrate and method of manufacture | 艾利迪公司 | 2024-01-16 | — | — | CN | disclosed |
| WO-2022108908-A1 | LOW RESISTANCE PULSED CVD TUNGSTEN | LAM RESEARCH CORPORATION (US) | 2022-05-27 | — | — | WO | disclosed |
| WO-2021140429-A1 | METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE WITH IMPROVED DICING PROPERTIES | MURATA MANUFACTURING CO., LTD. (JP) | 2021-07-15 | — | — | WO | disclosed |
| EP-3848988-A1 | METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE WITH IMPROVED DICING PROPERTIES | Murata Manufacturing Co., Ltd. (JP) | 2021-07-14 | — | — | EP | disclosed |
| US-20200058674-A1 | METHODS FOR FORMING STRUCTURALLY- REINFORCED SEMICONDUCTOR PLUG IN THREE-DIMENSIONAL MEMORY DEVICE | YANGTZE MEMORY TECHNOLOGIES CO., LTD. (CN) | 2020-02-20 | — | — | US | disclosed |
| CN-108538838-B | Method for manufacturing semiconductor element | 联华电子股份有限公司 | 2019-11-26 | — | — | CN | disclosed |
| EP-1008175-A4 | CAPPED INTERLAYER DIELECTRIC FOR CHEMICAL MECHANICAL POLISHING | INTEL CORP (US) | 2000-10-18 | — | — | EP | disclosed |
| EP-1008175-A1 | CAPPED INTERLAYER DIELECTRIC FOR CHEMICAL MECHANICAL POLISHING | INTEL CORPORATION (US) | 2000-06-14 | — | — | EP | disclosed |
| CN-1209646-A | Mfg. method for semiconductor device | NIPPON ELECTRIC CO (JP) | 1999-03-03 | — | — | CN | disclosed |
| CN-1197932-A | Array of thin film actuated mirrors and method for manufacture thereof | DAEWOO ELECTRONICS CO LTD (KR) | 1998-11-04 | — | — | CN | disclosed |
| WO-1998033950-A1 | METHOD OF LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF TiN FILM OVER TITANIUM FOR USE IN VIA LEVEL APPLICATIONS | TOKYO ELECTRON ARIZONA, INC. (US) | 1998-08-06 | — | — | WO | disclosed |
| EP-0789389-A2 | Method of peeling photo-resist layer without damage to metal wiring | NEC CORPORATION (JP) | 1997-08-13 | — | — | EP | disclosed |
| WO-1997012393-A1 | CAPPED INTERLAYER DIELECTRIC FOR CHEMICAL MECHANICAL POLISHING | INTEL CORPORATION (US) | 1997-04-03 | — | — | WO | disclosed |