⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2180089 | 1.00 | — | — | |
| SCHEMBL9997910 | 1.00 | — | — | |
| SCHEMBL16594173 | 1.00 | — | — | |
| SCHEMBL5041251 | 1.00 | — | — | |
| SCHEMBL16303 | 1.00 | — | — | |
| SCHEMBL7165058 | 1.00 | — | — | |
| SCHEMBL5022891 | 1.00 | — | — | |
| SCHEMBL7903268 | 1.00 | — | — | |
| SCHEMBL712967 | 0.82 | — | — | |
| SCHEMBL56474 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0506129-B1 | Process for forming an electrical contact through an insulation layer to a silicon semiconductor wafer thereunder | APPLIED MATERIALS INC (US) | 2000-08-30 | — | — | EP | disclosed |
| US-5356835-A | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer | APPLIED MATERIALS, INC. (US) | 1994-10-18 | — | — | US | disclosed |
| US-5250467-A | Method for forming low resistance and low defect density tungsten contacts to silicon semiconductor wafer | APPLIED MATERIALS, INC. (US) | 1993-10-05 | — | — | US | disclosed |
| EP-0506129-A1 | Process for forming an electrical contact through an insulation layer to a silicon semiconductor wafer thereunder | APPLIED MATERIALS, INC. (US) | 1992-09-30 | — | — | EP | disclosed |