SCHEMBL21883682

SCHEMBL21883682

CC(C)OC(=O)COc1c2ccccc2c(OCC(=O)OC(C)C)c2ccccc12

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.59
TSHR P16473 3/20 0.51
PSEN1 P49768 1/20 0.46
PSEN2 P49810 1/20 0.46
APH1B Q8WW43 1/20 0.46
NCSTN Q92542 1/20 0.46
APH1A Q96BI3 1/20 0.46
PSENEN Q9NZ42 1/20 0.46
ALDH1A1 P00352 6/20 0.41
MEN1 O00255 3/20 0.41
KMT2A Q03164 3/20 0.41
KDM4E B2RXH2 3/20 0.41
HPGD P15428 3/20 0.41
HSD17B10 Q99714 3/20 0.41
MAPK1 P28482 1/20 0.41
STAT3 P40763 1/20 0.41
LMNA P02545 2/20 0.41
PRNP P04156 2/20 0.41
AGTR1 P30556 1/20 0.40
L3MBTL1 Q9Y468 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21883675 0.86 MAPT (0.47) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL21811423 0.80 LMNA (0.49) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL272026 0.80 MAPT (0.81) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL21883673 0.79 MMP1 (0.49) MAPTPSEN1PSEN2APH1BNCSTN
SCHEMBL30594131 0.79 MMP1 (0.49) MAPTPSEN1PSEN2APH1BNCSTN
SCHEMBL22091779 0.79 LMNA (0.51) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL22091834 0.79 LMNA (0.51) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL22091793 0.79 LMNA (0.51) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL22092049 0.79 LMNA (0.51) MAPTTSHRPSEN1PSEN2APH1B
SCHEMBL22091853 0.79 LMNA (0.51) MAPTTSHRPSEN1PSEN2APH1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240012326-A1 PHOTOSENSITIVE ELEMENT, AND METHOD FOR FORMING RESIST PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-01-11 US disclosed
WO-2020213442-A1 PHOTOPOLYMERIZABLE COMPOSITION, COATING FILM CONTAINING SAID PHOTOPOLYMERIZABLE COMPOSITION, AND CURING METHOD THEREFOR 川崎化成工業株式会社 2020-10-22 WO disclosed
WO-2020208833-A1 PHOTO-RADICALLY CURABLE OXYGEN-INHIBITION-REDUCING AGENT, PHOTO-RADICALLY CURABLE OXYGEN-INHIBITION-REDUCING AGENT-CONTAINING PHOTO-RADICALLY POLYMERIZABLE COMPOSITION, PHOTO-RADICALLY CURABLE OXYGEN-INHIBITION-REDUCING AGENT-CONTAINING COATING FILM, AND METHOD FOR CURING SAME 川崎化成工業株式会社 2020-10-15 WO disclosed
WO-2020209209-A1 RADICAL PHOTOCURING OXYGEN INHIBITION REDUCER, RADICAL PHOTOPOLYMERIZABLE COMPOSITION CONTAINING RADICAL PHOTOCURING OXYGEN INHIBITION REDUCER, COATING CONTAINING RADICAL PHOTOCURING OXYGEN INHIBITION REDUCER, AND METHOD FOR CURING SAME 川崎化成工業株式会社 2020-10-15 WO disclosed
WO-2020121544-A1 MIGRATION-RESISTANT PHOTOPOLYMERIZATION SENSITIZER 川崎化成工業株式会社 2020-06-18 WO disclosed
WO-2020121384-A1 PHOTOPOLYMERIZATION SENSITIZER HAVING MIGRATION RESISTANCE 川崎化成工業株式会社 2020-06-18 WO disclosed
WO-2020054874-A1 PHOTOPOLYMERIZATION SENSITIZER 川崎化成工業株式会社 2020-03-19 WO disclosed
WO-2020054116-A1 PHOTOPOLYMERIZATION SENSITIZER 川崎化成工業株式会社 2020-03-19 WO disclosed