SCHEMBL2774500

SCHEMBL2774500

C=C(C)C(=O)OC1CCc2ccccc21.C=Cc1ccccc1O

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PIN1 Q13526 3/20 0.41
IDO1 P14902 2/20 0.39
CHRM4 P08173 3/20 0.38
DRD2 P14416 3/20 0.38
HTR7 P34969 3/20 0.38
KDM4E B2RXH2 1/20 0.37
ALDH1A1 P00352 1/20 0.37
MAPT P10636 1/20 0.37
TSHR P16473 1/20 0.37
HSD17B10 Q99714 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
TAS1R3 Q7RTX0 4/20 0.37
TAS1R1 Q7RTX1 4/20 0.37
TAS1R2 Q8TE23 3/20 0.37
FFAR1 O14842 2/20 0.34
HTR2C P28335 1/20 0.34
OPRM1 P35372 1/20 0.34
DRD3 P35462 1/20 0.34
AVPR1A P37288 1/20 0.34
OPRK1 P41145 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2188983 0.87 IDO1 (0.50) PIN1IDO1CHRM4DRD2HTR7
SCHEMBL29733350 0.79 IDO1 (0.53) IDO1CHRM4DRD2HTR7ALDH1A1
SCHEMBL2190894 0.79 IDO1 (0.53) IDO1CHRM4DRD2HTR7ALDH1A1
SCHEMBL2774502 0.78 SMN1; SMN2 (0.40) PIN1IDO1CHRM4DRD2HTR7
SCHEMBL2192860 0.78 IDO1 (0.48) PIN1IDO1CHRM4DRD2HTR7
SCHEMBL2190012 0.77 IDO1 (0.47) PIN1IDO1CHRM4DRD2HTR7
SCHEMBL19771575 0.77 IDO1 (0.47) PIN1IDO1CHRM4DRD2HTR7
SCHEMBL3297240 0.73 ALDH1A1 (0.48) KDM4EALDH1A1MAPTTSHRTDP1
SCHEMBL16866687 0.73 POLB (0.38) PIN1IDO1
SCHEMBL817976 0.73 IDO1 (0.56) PIN1IDO1CHRM4DRD2HTR7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8841061-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-23 US disclosed
US-8808966-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-19 US disclosed
US-8574817-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-11-05 US disclosed
US-8450042-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-28 US disclosed
US-20130084528-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084529-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130084527-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-04 US disclosed
US-20130029269-A1 POSITIVE RESIST COMPOSITION AND PATTTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed