⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL4760219 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL518262 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL6865393 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL10656468 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL2428919 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL27491598 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL3152368 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL868720 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL4806461 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL7806651 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 667 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110226231-A | With the nitride structure without golden contact portion and the method for forming this structure | 雷声公司 | 2019-09-10 | — | — | CN | claimed |
| EP-1897141-B1 | BURIED CONDUCTOR FOR IMAGERS | MICRON TECHNOLOGY INC (US) | 2019-06-12 | — | — | EP | claimed |
| US-20180240754-A1 | NITRIDE STRUCTURE HAVING GOLD-FREE CONTACT AND METHODS FOR FORMING SUCH STRUCTURES | RAYTHEON COMPANY (US) | 2018-08-23 | — | — | US | claimed |
| US-9853022-B2 | MIM capacitor formation in RMG module | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-12-26 | — | — | US | claimed |
| US-9698215-B2 | MIM capacitor formation in RMG module | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-07-04 | — | — | US | claimed |
| US-9653456-B2 | MIM capacitor formation in RMG module | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-05-16 | — | — | US | claimed |
| US-20170125511-A1 | MIM CAPACITOR FORMATION IN RMG MODULE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-05-04 | — | — | US | claimed |
| US-20170040314-A1 | MIM CAPACITOR FORMATION IN RMG MODULE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-02-09 | — | — | US | claimed |
| US-20170040412-A1 | MIM CAPACITOR FORMATION IN RMG MODULE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-02-09 | — | — | US | claimed |
| CN-103794721-B | A kind of phase-change memory cell and preparation method thereof | 中国科学院苏州纳米技术与纳米仿生研究所 | 2017-01-04 | — | — | CN | claimed |
| WO-2003010817-A2 | LIGHT EMITTING DIODES INCLUDING MODIFICATIONS FOR SUBMOUNT BONDING AND MANUFACTURING METHODS THEREFOR | CREE, INC. (US) | 2003-02-06 | — | — | WO | claimed |
| US-20030015721-A1 | Light emitting diodes including modifications for submount bonding and manufacturing methods therefor | CREELED, INC. | 2003-01-23 | — | — | US | claimed |
| EP-1246240-A2 | Method and apparatus for forming improved metal interconnects | Applied Materials, Inc. (US) | 2002-10-02 | — | — | EP | claimed |
| US-20020003252-A1 | FLASH MEMORY CIRCUIT WITH WITH RESISTANCE TO DISTURB EFFECT | MICRON TECHNOLOGY, INC. | 2002-01-10 | — | — | US | claimed |
| CN-1319881-A | Method for forming self-aligning contact welding disc in metal inlay grid technology | SAMSUNG ELECTRONICS CO LTD (KR) | 2001-10-31 | — | — | CN | claimed |
| WO-2001059850-A2 | STRUCTURES AND METHODS FOR IMPROVED CAPACITOR CELLS | MICRON TECHNOLOGY, INC. (US) | 2001-08-16 | — | — | WO | claimed |
| US-6008522-A | Structure of buried bit line | UNITED SEMICONDUCTOR CORP. (TW) | 1999-12-28 | — | — | US | claimed |
| US-5882972-A | Method of fabricating a buried bit line | UNITED SEMICONDUCTOR CORP. (TW) | 1999-03-16 | — | — | US | claimed |
| US-5804503-A | FORMING VIA ON SEMICONDUCTOR SUBSTRATE EXTENDING THROUGH INSULATOR LAYER AND POLYMER FILM, DEPOSITING CONDUCTIVE METAL IN VIA, DEPOSITING SECOND INSULATOR FILM, REMOVING PORTION OF SECOND LAYER TO FORM SECOND VIA EXTENDING THROUGH LAYER | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1998-09-08 | — | — | US | claimed |
| US-5710460-A | SEMICONDUCTOR DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1998-01-20 | — | — | US | claimed |