⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL219667 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL4760219 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL518262 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL6865393 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL10656468 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL2428919 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL27491598 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL3152368 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL4806461 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL7806651 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 115 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11728362-B2 | Image sensor pixel and metal shielding of charge storage device of image sensor pixel formed by one step process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (TW) | 2023-08-15 | — | — | US | claimed |
| US-10319852-B2 | Forming eDRAM unit cell with VFET and via capacitance | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-06-11 | — | — | US | claimed |
| US-20180211963-A1 | FORMING eDRAM UNIT CELL WITH VFET AND VIA CAPACITANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2018-07-26 | — | — | US | claimed |
| US-9991267-B1 | Forming eDRAM unit cell with VFET and via capacitance | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-06-05 | — | — | US | claimed |
| US-20130277767-A1 | ETCH STOP LAYER FORMATION IN METAL GATE PROCESS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-24 | — | — | US | claimed |
| US-8466061-B2 | Method for forming a through via in a semiconductor element and semiconductor element comprising the same | INFINEON TECHNOLOGIES AG (DE) | 2013-06-18 | — | — | US | claimed |
| US-20120074570-A1 | Method for Forming a Through Via in a Semiconductor Element and Semiconductor Element Comprising the Same | INFINEON TECHNOLOGIES AG (DE) | 2012-03-29 | — | — | US | claimed |
| US-7968403-B2 | Method of fabricating a sleeve insulator for a contact structure | MICRON TECHNOLOGY, INC. (US) | 2011-06-28 | — | — | US | claimed |
| CN-101656219-B | System-in-package method | SEMICONDUCTOR MFG INT SHANGHAI | 2011-03-23 | — | — | CN | claimed |
| CN-101826551-A | Trench type semiconductor power device with low gate resistance and preparation method thereof | M MOS SEMICONDUCTOR HONG KONG LTD | 2010-09-08 | — | — | CN | claimed |
| US-20080173949-A1 | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR | EPISIL TECHNOLOGIES INC. (TW) | 2008-07-24 | — | — | US | claimed |
| US-20070004199-A1 | Method of making a contact structure | MICRON TECHNOLOGY, INC. | 2007-01-04 | — | — | US | claimed |
| US-7115506-B2 | Method of making a contact structure | MICRON TECHNOLOGY, INC. (US) | 2006-10-03 | — | — | US | claimed |
| US-6838367-B1 | Method for simultaneous formation of fuse and capacitor plate and resulting structure | MICRON TECHNOLOGY, INC. (US) | 2005-01-04 | — | — | US | claimed |
| US-6780739-B1 | Bit line contact structure and method for forming the same | NANYA TECHNOLOGY CORPORATION (TW) | 2004-08-24 | — | — | US | claimed |
| CN-1159758-C | Method for manufacturing dynamic random access memory and metal connecting wire | ̨������·����ɷ�����˾ | 2004-07-28 | — | — | CN | claimed |
| US-20020081841-A1 | Method of making a contact structure | MICRON TECHNOLOGY, INC. | 2002-06-27 | — | — | US | claimed |
| EP-0740348-B1 | Semiconductor memory structure, using a ferroelectric dielectric and method of formation | INFINEON TECHNOLOGIES AG (DE) | 2002-02-27 | — | — | EP | claimed |
| US-6348411-B1 | Method of making a contact structure | MICRON TECHNOLOGY, INC. | 2002-02-19 | — | — | US | claimed |
| CN-1229272-A | Method for manufacturing dynamic random access memory and metal connecting wire | SHIDA INTEGRATED CIRCUIT CO LT (CN) | 1999-09-22 | — | — | CN | claimed |