SCHEMBL2199047

SCHEMBL2199047

C=Cc1ccc2cc3ccccc3cc2c1Oc1c(C=C)ccc2cc3ccccc3cc12

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 9/20 0.38
MAPT P10636 5/20 0.38
KMT2A Q03164 4/20 0.38
CYP1A2 P05177 4/20 0.38
MEN1 O00255 3/20 0.38
PKM P14618 2/20 0.38
MAPK1 P28482 2/20 0.38
MITF O75030 1/20 0.38
CYP2C9 P11712 1/20 0.38
RAB9A P51151 1/20 0.38
CCR6 P51684 1/20 0.38
NPSR1 Q6W5P4 1/20 0.38
HSD17B10 Q99714 4/20 0.38
HIF1A Q16665 2/20 0.38
CYP1B1 Q16678 1/20 0.38
NQO1 P15559 1/20 0.33
KDM4E B2RXH2 4/20 0.33
HPGD P15428 3/20 0.33
CYP3A4 P08684 2/20 0.33
ALOX15 P16050 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2201698 0.83 ALDH1A1 (0.42) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL29368544 0.78 ALDH1A1 (0.40) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL5068229 0.78 ALDH1A1 (0.40) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL8741142 0.77 GPBAR1 (0.41) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL9234416 0.76 ALDH1A1 (0.39) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL29891468 0.75 ALDH1A1 (0.54) ALDH1A1MAPTKMT2ACYP1A2MEN1
Anthracene SCHEMBL28971423 0.75 ALDH1A1 (0.54) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL27113 0.75 ALDH1A1 (0.54) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL2354149 0.74 ESR1 (0.45) ALDH1A1MAPTKMT2ACYP1A2MEN1
SCHEMBL1167375 0.73 ALDH1A1 (0.53) ALDH1A1MAPTKMT2ACYP1A2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115210219-A Oxime ester photoinitiators 巴斯夫欧洲公司 2022-10-18 CN disclosed
CN-107315318-B Photosensitive composition 东京应化工业株式会社 2022-07-01 CN disclosed
CN-113316744-A Oxime ester photoinitiators with specific aroyl chromophores 巴斯夫欧洲公司 2021-08-27 CN disclosed
US-7976914-B2 Resin film, production method thereof, polarizing plate and liquid crystal display device FUJIFILM CORPORATON (JP) 2011-07-12 US disclosed
US-20070290168-A1 Resin film, production method thereof, polarizing plate and liquid crystal display device FUJIFILM CORPORATION (JP) 2007-12-20 US disclosed
US-20070148585-A1 Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer LION CORPORATION. 2007-06-28 US disclosed
EP-1698645-A1 HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER Lion Corporation (JP) 2006-09-06 EP disclosed
EP-1692094-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ Electronic Materials USA Corp. (US) 2006-08-23 EP disclosed
US-7030201-B2 Bottom antireflective coatings AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-04-18 US disclosed
WO-2005052016-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2005-06-09 WO disclosed
US-20020015909-A1 BOTTOM ANTI-REFLECTIVE COATING MATERIAL COMPOSITION FOR PHOTORESIST AND METHOD OF FORMING RESIST PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2002-02-07 US disclosed
EP-0851300-B1 Bottom anti-reflective coating material composition and method of forming resist pattern using the same FUJI PHOTO FILM CO LTD (JP) 2001-10-24 EP disclosed
EP-0823661-B1 Composition for anti-reflective coating material FUJI PHOTO FILM CO LTD (JP) 2001-07-04 EP disclosed
US-6248500-B1 ACRYLIC POLYMERS AND PHENOL, NAPHTHOL OR HYDROXYANTHRACENE COMPOUNDS FUJI PHOTO FILM CO., LTD. (JP) 2001-06-19 US disclosed
US-6165684-A Bottom anti-reflective coating material composition and method for forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 2000-12-26 US disclosed
US-6090531-A UNDERGOES NO INTERMIXING WITH THE RESIST LAYER, PROVIDES AN EXCELLENT RESIST PATTERN AND SHOWS A HIGHER DRY ETCHING RATE THAN RESIST AND A RESIST PATTERN FORMATION PROCESS FUJI PHOTO FILM CO., LTD. (JP) 2000-07-18 US disclosed
EP-0989463-A2 Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern FUJI PHOTO FILM CO., LTD. (JP) 2000-03-29 EP disclosed
EP-0851300-A1 Bottom anti-reflective coating material composition and method of forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 1998-07-01 EP disclosed
EP-0823661-A1 Composition for anti-reflective coating material FUJI PHOTO FILM CO., LTD. (JP) 1998-02-11 EP disclosed
US-4123275-A A VINYL ESTER WITH A HYDROXYALKYL ACRYLATE OR METHACRYLATE, ACRYLAMIDES, METHACRYLAMIDES OR A VINYL HETEROCYCLE FUJI PHOTO FILM CO., LTD. (JP) 1978-10-31 US disclosed