⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL33330 | 1.00 | — | — | |
| SCHEMBL5996231 | 0.82 | — | — | |
| SCHEMBL4326574 | 0.82 | — | — | |
| SCHEMBL8368424 | 0.82 | — | — | |
| SCHEMBL721061 | 0.82 | — | — | |
| SCHEMBL19056860 | 0.82 | — | — | |
| SCHEMBL19056853 | 0.82 | — | — | |
| SCHEMBL17766196 | 0.82 | — | — | |
| SCHEMBL227138 | 0.82 | — | — | |
| SCHEMBL19056868 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20200365457-A1 | SEMICONDUCTOR CHIP INCLUDING BACK-SIDE CONDUCTIVE LAYER | INFINEON TECHNOLOGIES AG (DE) | 2020-11-19 | — | — | US | claimed |
| CN-105097461-B | A kind of manufacture method of semiconductor devices | 中芯国际集成电路制造(北京)有限公司 | 2018-03-30 | — | — | CN | disclosed |
| CN-1934287-B | Apparatus and method for atomic layer deposition of high dielectric constant hafnium-containing dielectric materials | APPLIED MATERIALS INC | 2012-06-20 | — | — | CN | disclosed |
| US-20110169062-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | ELPIDA MEMORY, INC. (JP) | 2011-07-14 | — | — | US | disclosed |
| CN-101052745-B | Apparatus and method for atomic layer deposition of high dielectric constant hafnium-containing dielectric materials | APPLIED MATERIALS INC | 2011-02-23 | — | — | CN | disclosed |
| US-20090166703-A1 | MEMORY DEVICE WITH A LENGTH-CONTROLLABLE CHANNEL | NANYA TECHNOLOGY CORPORATION (TW) | 2009-07-02 | — | — | US | disclosed |
| CN-101052745-A | Apparatus and method for atomic layer deposition of high dielectric constant hafnium-containing dielectric materials | APPLIED MATERIALS INC (US) | 2007-10-10 | — | — | CN | disclosed |
| CN-1934287-A | Apparatus and method for atomic layer deposition of high dielectric constant hafnium-containing dielectric materials | APPLIED MATERIALS INC (US) | 2007-03-21 | — | — | CN | disclosed |
| EP-1588403-A2 | LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION | International Business Machines Corporation (US) | 2005-10-26 | — | — | EP | disclosed |
| WO-2004066367-A2 | LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2004-08-05 | — | — | WO | disclosed |
| EP-1350265-A1 | METHOD OF ETCHING TUNGSTEN OR TUNGSTEN NITRIDE ELECTRODE GATES IN SEMICONDUCTOR STRUCTURES | Applied Materials, Inc. (US) | 2003-10-08 | — | — | EP | disclosed |
| WO-2002065539-A1 | METHOD OF ETCHING TUNGSTEN OR TUNGSTEN NITRIDE ELECTRODE GATES IN SEMICONDUCTOR STRUCTURES | APPLIED MATERIALS, INC. (US) | 2002-08-22 | — | — | WO | disclosed |
| US-5049975-A | Multilayer structure; refractory silicide, nitride | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1991-09-17 | — | — | US | disclosed |