SCHEMBL33330

SCHEMBL33330

[N-3].[N-3].[W+6]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2199064 1.00
SCHEMBL5996231 0.82
SCHEMBL4326574 0.82
SCHEMBL8368424 0.82
SCHEMBL721061 0.82
SCHEMBL19056860 0.82
SCHEMBL19056853 0.82
SCHEMBL17766196 0.82
SCHEMBL227138 0.82
SCHEMBL19056868 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 89885 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6423992-B1 None US claimed
US-20260150377-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-05-28 US claimed
US-20260150315-A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME RENESAS ELECTRONICS CORPORATION (JP) 2026-05-28 US claimed
EP-3891814-B1 GATE METAL FORMATION ON GALLIUM NITRIDE OR ALUMINUM GALLIUM NITRIDE MACOM TECH SOLUTIONS HOLDINGS INC (US) 2026-05-27 EP claimed
EP-4747333-A1 COMPOSITIONS COMPRISING 1,1,1,4,4,4-HEXAFLUORO-2-BUTYNE The Chemours Company FC, LLC (US) 2026-05-27 EP claimed
CN-122094206-A Vertical charge transfer imaging sensor and method of making the same 2026-05-26 CN claimed
CN-116344536-B Semiconductor structure and forming method thereof SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP. (CN) 2026-05-26 CN claimed
US-12642021-B2 Methods for patterning substrates to adjust voltage properties APPLIED MATERIALS, INC. (US) 2026-05-26 US claimed
CN-116056464-B Semiconductor device and method for manufacturing the same SK Hynix Inc. (KR) 2026-05-26 CN claimed
CN-122091616-A Core-shell structure catalyst and atomic layer deposition preparation method and application thereof 2026-05-26 CN claimed
EP-0127281-A1 An electrode for a semiconductor device FUJITSU LIMITED (JP) 1984-12-05 EP claimed
US-4469489-A Coated composite modified silicon aluminum oxynitride cutting tools GTE LABORATORIES INCORPORATED (US) 1984-09-04 US claimed
US-4441894-A Coated composite silicon nitride cutting tools GTE LABORATORIES INCORPORATED (US) 1984-04-10 US claimed
EP-0095131-A1 Coated silicon nitride cutting tools GTE VALENITE CORPORATION (US) 1983-11-30 EP claimed
EP-0095130-A1 Coated composite modified silicon aluminum oxynitride cutting tools GTE Laboratories Incorporated (US) 1983-11-30 EP claimed
EP-0095128-A1 Coated composite silicon nitride cutting tools GTE Laboratories Incorporated (US) 1983-11-30 EP claimed
US-4406668-A Nitride coated silicon nitride cutting tools GTE LABORATORIES INCORPORATED (US) 1983-09-27 US claimed
US-4406670-A Nitride coated composite modified silicon aluminum oxynitride cutting tools GTE LABORATORIES INCORPORATED (US) 1983-09-27 US claimed
US-4406667-A Nitride coated composite silicon nitride cutting tools GTE LABORATORIES INCORPORATED (US) 1983-09-27 US claimed
US-4387387-A PN Or PIN junction type semiconductor photoelectric conversion device SEMICONDUCTOR ENERGY LABORATORY CO., LTD., , A CORP. OF JAPAN (JP) 1983-06-07 US claimed