SCHEMBL227138

SCHEMBL227138

[N-3].[N-3].[W+6].[W]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL33330 0.82
SCHEMBL2199064 0.82
SCHEMBL19056860 0.67
SCHEMBL4326574 0.67
SCHEMBL5996231 0.67
SCHEMBL8368424 0.67
SCHEMBL2816915 0.67
SCHEMBL17766196 0.67
SCHEMBL721061 0.67
SCHEMBL19056853 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 516 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114411117-B Method for preparing diamond film with micro-texture surface on stainless steel 浙江工业大学 2024-05-03 CN claimed
CN-111293164-B Semiconductor device with a plurality of semiconductor chips 南亚科技股份有限公司 2023-03-14 CN claimed
CN-114411117-A Method for preparing surface microtextured diamond film on stainless steel 浙江工业大学 2022-04-29 CN claimed
US-10937886-B2 Semiconductor device with negative capacitance material in buried channel NANYA TECHNOLOGY CORPORATION (TW) 2021-03-02 US claimed
CN-111293164-A Semiconductor device with a plurality of semiconductor chips 南亚科技股份有限公司 2020-06-16 CN claimed
US-20200185507-A1 SEMICONDUCTOR DEVICE WITH NEGATIVE CAPACITANCE MATERIAL IN BURIED CHANNEL NANYA TECHNOLOGY CORPORATION (TW) 2020-06-11 US claimed
CN-103125013-B System and method for selective deposition of tungsten in a via NOVELLUS SYSTEMS, INC. (US) 2015-09-30 CN claimed
CN-103125013-A System and method for selective deposition of tungsten in a via NOVELLUS SYSTEMS INC 2013-05-29 CN claimed
US-20100213541-A1 SEMICONDUCTOR DEVICE HAVING RECESS CHANNEL STRUCTURE SAMSUNG ELECTRONICS CO., LTD. 2010-08-26 US claimed
US-7723755-B2 Semiconductor having buried word line cell structure and method of fabricating the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-05-25 US claimed
US-6653737-B2 Interconnection structure and method for fabricating same INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-11-25 US claimed
US-20030143792-A1 Twin MONOS cell fabrication method and array organization HALO LSI, INC. 2003-07-31 US claimed
US-6531350-B2 Twin MONOS cell fabrication method and array organization HALO, INC. 2003-03-11 US claimed
US-20020142581-A1 Assembly including semiconductor chip, conductive pad, conductive trace, connection joint, and insulative adhesive; conductive trace includes routing line and pillar; connection joint contacts and electrically connects routing line and pad INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-10-03 US claimed
US-20020137296-A1 Twin monos cell fabrication method and array organization HALO LSI DESIGN AND DEVICE TECHNOLOGY INC. 2002-09-26 US claimed
EP-1237192-A2 Twin monos memory cell and corresponding fabrication method Halo Lsi Design and Device Technology Inc. (US) 2002-09-04 EP claimed
US-6436814-B1 Interconnection structure and method for fabricating same INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-08-20 US claimed
US-6380082-B2 Method of fabricating Cu interconnects with reduced Cu contamination UNITED MICROELECTRONICS CORP. (TW) 2002-04-30 US claimed
US-20010044202-A1 METHOD OF PREVENTING COPPER POISONING IN THE FABRICATION OF METAL INTERCONNECTS UNITED MICROELECTRONICS CORP. (TW) 2001-11-22 US claimed
US-5979784-A Method of forming local interconnection of a static random access memory WINBOND ELECTRONICS CORP. (TW) 1999-11-09 US claimed