SCHEMBL2208065

SCHEMBL2208065

C=C(C)C(=O)OC12CC3CC(CC(OC(=O)OC(C)(C)C)(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
MAPK1 P28482 1/20 0.33
KMT2A Q03164 1/20 0.33
EPHX2 P34913 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12240732 0.92 ELANE (0.30)
SCHEMBL12603694 0.89 MEN1 (0.35) MEN1MAPK1KMT2AEPHX2
SCHEMBL12240733 0.87 DPP8 (0.32)
SCHEMBL737596 0.87 ALDH1A1 (0.35)
SCHEMBL19862666 0.86 CYP17A1 (0.30)
SCHEMBL1143543 0.84 CYP17A1 (0.35) MEN1MAPK1KMT2AEPHX2
SCHEMBL4108178 0.83 EPHX2 (0.33) MEN1MAPK1KMT2AEPHX2
SCHEMBL7914851 0.82 MEN1 (0.39) MEN1MAPK1KMT2AEPHX2
SCHEMBL16708441 0.82 CYP17A1 (0.31)
SCHEMBL76543 0.82 DPP4 (0.38)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 104 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9951164-B2 Non-ionic aryl ketone based polymeric photo-acid generators INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-04-24 US disclosed
US-9951164-B2 Non-ionic aryl ketone based polymeric photo-acid generators INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2018-04-24 US disclosed
US-20180044459-A1 NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS CENTRAL GLASS CO., LTD. (JP) 2018-02-15 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9696625-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-07-04 US disclosed
US-9696625-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-07-04 US disclosed
US-9606433-B2 Resist composition, method of forming resist pattern, polymeric compound and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-03-28 US disclosed
US-9606433-B2 Resist composition, method of forming resist pattern, polymeric compound and compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-03-28 US disclosed
US-20160266495-A1 METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2016-09-15 US disclosed
US-20090264565-A1 POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-10-22 US disclosed
US-20090264565-A1 POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-10-22 US disclosed
US-20090181325-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-16 US disclosed
US-20090181325-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-07-16 US disclosed
US-20090142696-A1 POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD TOKYO OHIKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20090142696-A1 POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD TOKYO OHIKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20090075204-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-03-19 US disclosed
US-20090075204-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-03-19 US disclosed
US-20090068592-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-03-12 US disclosed
US-20090068592-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2009-03-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180044459-A1 NON-IONIC ARYL KETONE BASED POLYMERIC PHOTO-ACID GENERATORS PPARG, PPARA, PPARD MEN1 4879/4885MAPK1 777/4885KMT2A 1088/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.